High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

Yan Yang; Wenjuan Zhu; T. P. Ma; Susanne Stemmer

doi:10.1063/1.1652240

High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

Yan Yang, Wenjuan Zhu, T. P. Ma, Susanne Stemmer

Research output: Contribution to journal › Article › peer-review

Abstract

The phase stability of hafnium aluminate films was analyzed for alternative gate dielectrics. The films of different compositions were deposited by jet vapor deposition at room temperature. The microstructure of the films was analyzed by high-resolution transmission electron microscopy, electron diffraction and electron energy loss spectroscopy (EELS) after annealing at 1100°C. The results show that with an increase in the Al content in the films, the amount of metastable HfO ₂ with a tetragonal distorted fluorite structure increases, and no crystalline Al ₂O ₃ phase is detected in electron diffraction patterns in films with up to 30 mol% Al ₂O ₃.

Original language	English (US)
Pages (from-to)	3772-3776
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.1652240
State	Published - Apr 1 2004
Externally published	Yes

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General Physics and Astronomy

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10.1063/1.1652240

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title = "High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics",

abstract = "The phase stability of hafnium aluminate films was analyzed for alternative gate dielectrics. The films of different compositions were deposited by jet vapor deposition at room temperature. The microstructure of the films was analyzed by high-resolution transmission electron microscopy, electron diffraction and electron energy loss spectroscopy (EELS) after annealing at 1100°C. The results show that with an increase in the Al content in the films, the amount of metastable HfO 2 with a tetragonal distorted fluorite structure increases, and no crystalline Al 2O 3 phase is detected in electron diffraction patterns in films with up to 30 mol% Al 2O 3.",

author = "Yan Yang and Wenjuan Zhu and Ma, {T. P.} and Susanne Stemmer",

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T1 - High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

AU - Yang, Yan

AU - Zhu, Wenjuan

AU - Ma, T. P.

AU - Stemmer, Susanne

PY - 2004/4/1

Y1 - 2004/4/1

N2 - The phase stability of hafnium aluminate films was analyzed for alternative gate dielectrics. The films of different compositions were deposited by jet vapor deposition at room temperature. The microstructure of the films was analyzed by high-resolution transmission electron microscopy, electron diffraction and electron energy loss spectroscopy (EELS) after annealing at 1100°C. The results show that with an increase in the Al content in the films, the amount of metastable HfO 2 with a tetragonal distorted fluorite structure increases, and no crystalline Al 2O 3 phase is detected in electron diffraction patterns in films with up to 30 mol% Al 2O 3.

AB - The phase stability of hafnium aluminate films was analyzed for alternative gate dielectrics. The films of different compositions were deposited by jet vapor deposition at room temperature. The microstructure of the films was analyzed by high-resolution transmission electron microscopy, electron diffraction and electron energy loss spectroscopy (EELS) after annealing at 1100°C. The results show that with an increase in the Al content in the films, the amount of metastable HfO 2 with a tetragonal distorted fluorite structure increases, and no crystalline Al 2O 3 phase is detected in electron diffraction patterns in films with up to 30 mol% Al 2O 3.

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High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

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