@inproceedings{6f2a6c0b872f4506bc50ac8fdf79ee0b,
title = "High-Temperature Electronics Using β- Ga203 FETs and AIGaN/GaN HEMTs",
abstract = "Development of high-temperature compatible electronic devices is desired for several applications. Electronic devices made with wide bandgap and ultra-wide bandgap materials are suitable for these high temperature applications. In this article, we presented high temperature device data obtained from p-Ga203 field-effect transistors (FETs) and AIGaN/GaN high-electron mobility transistors (HEMTs) at temperatures up to 500 oC, We discussed device details, systematically analyzed the electrical data by considering insights obtained from materials characterization, and explained the variation in device parameters (such as transconductance, threshold voltage, contact resistance, gate leakage) with temperature and time.",
keywords = "Ga203 FET, GaN HEMT, gate leakage, high-temperature electronics, reliability, transmission electron microscopy",
author = "Islam, {Ahmad E.} and Matt Grupen and Gary Hughes and Andreas Popp and Sepelak, {Nicholas P.} and Leedy, {Kevin D.} and Thaddeus Asel and Wenjuan Zhu and Miesle, {Adam T.} and Liddy, {Kyle J.} and Adam Neal and Brian Poling and Hanwool Lee and Dryden, {Daniel M.} and Shin Mou and Kelson Chabak and Walker, {Dennis E.} and Antonio Crespo and Eric Heller and Green, {Andrew J.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE National Aerospace and Electronics Conference, NAECON 2023 ; Conference date: 28-08-2023 Through 31-08-2023",
year = "2023",
doi = "10.1109/NAECON58068.2023.10365790",
language = "English (US)",
series = "Proceedings of the IEEE National Aerospace Electronics Conference, NAECON",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "263--268",
booktitle = "NAECON 2023 - IEEE National Aerospace and Electronics Conference",
address = "United States",
}