High-temperature Au implantation into Ni-Be and Ni-Si alloys

M. R. James, N. Q. Lam, L. E. Rehn, P. M. Baldo, L. Funk, J. F. Stubbins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of implantation temperature and target composition on the depth distribution of the implanted species were systematically investigated in the present work. Au+ ions were implanted at 300 keV into polycrystalline Ni-Be and Ni-Si alloys at temperatures between 25 and 700 °C to a dose of 1016 cm-2. The depth distributions of Au were analyzed with RBS using He+ at both 1.7 and 3.0 MeV, and those of the other alloying elements by SIMS. Theoretical modeling of compositional redistribution during implantation at elevated temperatures was also carried out with the aid of a comprehensive kinetic model. The analysis indicated that below approx.250 °C, the primary controlling processes were preferential sputtering and displacement mixing, while between 250 and 600 °C radiation-induced segregation was dominant. Above 600 °C, thermal-diffusion effects were most important. A systematic fitting of model calculations to experimental measurements provided values for various defect migration and formation parameters.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages375-380
Number of pages6
ISBN (Print)1558991743
StatePublished - 1993
Externally publishedYes
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume279
ISSN (Print)0272-9172

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period11/30/9212/4/92

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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