High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

W. Zhao, I. Adesida

Research output: Contribution to journalArticlepeer-review


Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.

Original languageEnglish (US)
Pages (from-to)664-665
Number of pages2
JournalElectronics Letters
Issue number11
StatePublished - May 26 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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