High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

W. Zhao; I. Adesida

doi:10.1049/el:20051106

High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

W. Zhao, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.

Original language	English (US)
Pages (from-to)	664-665
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	11
DOIs	https://doi.org/10.1049/el:20051106
State	Published - May 26 2005
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20051106

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@article{83441b126e854cca81e0f4532f8b1ddb,

title = "High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs",

abstract = "Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.",

author = "W. Zhao and I. Adesida",

year = "2005",

month = may,

day = "26",

doi = "10.1049/el:20051106",

language = "English (US)",

volume = "41",

pages = "664--665",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons, Ltd.",

number = "11",

}

TY - JOUR

T1 - High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

AU - Zhao, W.

AU - Adesida, I.

PY - 2005/5/26

Y1 - 2005/5/26

N2 - Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.

AB - Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.

UR - http://www.scopus.com/inward/record.url?scp=20344362709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344362709&partnerID=8YFLogxK

U2 - 10.1049/el:20051106

DO - 10.1049/el:20051106

M3 - Article

AN - SCOPUS:20344362709

SN - 0013-5194

VL - 41

SP - 664

EP - 665

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

Abstract

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