Abstract
Enhancement mode SiC nMISFET's made with JVD ONO (Oxide-Nitride-Oxide) stack gate dielectric have been tested at 450°C, the highest temperature ever reported, for both performance and reliability. The data indicate that these devices are stable and highly reliable at high temperatures. Particularly, the projected lifetime at an oxide field of 3MV/cm is well over 200 years, suggesting that the JVD ONO represents probably the most robust gate dielectric for SiC MISFET's among those that are currently available.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 209-212 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1999 |
| Externally published | Yes |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry