High temperature (450°C) reliable NMISFET's on p-type 6H-SiC

X. W. Wang, Wenjuan Zhu, X. Guo, T. P. Ma, Jesse B. Tucker, Mulpuri V. Rao

Research output: Contribution to journalConference articlepeer-review


Enhancement mode SiC nMISFET's made with JVD ONO (Oxide-Nitride-Oxide) stack gate dielectric have been tested at 450°C, the highest temperature ever reported, for both performance and reliability. The data indicate that these devices are stable and highly reliable at high temperatures. Particularly, the projected lifetime at an oxide field of 3MV/cm is well over 200 years, suggesting that the JVD ONO represents probably the most robust gate dielectric for SiC MISFET's among those that are currently available.

Original languageEnglish (US)
Pages (from-to)209-212
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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