High-Tc trilayer tunneling and Josephson junction structures made using atomic layer-by-layer growth

J. N. Eckstein, Ivan Bozovic, Gary F. Virshup

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Very precise artificial structuring of high Tc heterostructures is possible using atomic layer-by-layer molecular beam epitaxy. Cuprates are combined with other oxides, such as titanates, to make atomically precise heterostructures for studying transport and interfacial effects. Titanate slabs as thin as one unit cell thick can be grown without pinholes and provide tunneling barriers for c-axis transport. Single doped unit cells of BSCCO-2212 can also be used as barriers. These give SNS Josephson junctions at temperatures as high as 65 K. Since the crystallographic structure of the barrier is identical to the structure of the 2212 electrode material, it is easily possible to stack more than one junction in close proximity. This results in phase-locked operation of two junctions together.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages154-160
Number of pages7
ISBN (Print)0819414522, 9780819414526
DOIs
StatePublished - Jan 1 1994
Externally publishedYes
EventSuperconducting Superlattices and Multilayers - Los Angeles, CA, USA
Duration: Jan 24 1994Jan 25 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2157
ISSN (Print)0277-786X

Other

OtherSuperconducting Superlattices and Multilayers
CityLos Angeles, CA, USA
Period1/24/941/25/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Eckstein, J. N., Bozovic, I., & Virshup, G. F. (1994). High-Tc trilayer tunneling and Josephson junction structures made using atomic layer-by-layer growth. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 154-160). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2157). Publ by Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.179157