High substrate temperature a-Si:H grown by DC reactive magnetron sputtering

Y. H. Liang; N. Maley; J. R. Abelson

doi:10.1557/proc-297-145

High substrate temperature a-Si:H grown by DC reactive magnetron sputtering

Y. H. Liang, N. Maley, J. R. Abelson

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (T_s = 320 to approximately 425 °C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H₂ are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2 to approximately 5×10¹⁵ cm^-3 with H content changing from 15-10 at.% as T_s increases from 320-375 °C. For 100 hrs white light exposure at 1 W/cm², a heavily degraded state was obtained with mid-gap state density in the range 2-3×10¹⁶ cm^-3 over this T_s range. These are among the lowest values reported for intrinsic a-Si:H.

Original language	English (US)
Title of host publication	Amorphous Silicon Technology
Publisher	Publ by Materials Research Society
Pages	145-150
Number of pages	6
ISBN (Print)	155899193X, 9781558991934
DOIs	https://doi.org/10.1557/proc-297-145
State	Published - 1993
Event	Proceedings of the MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 13 1993 → Apr 16 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	297
ISSN (Print)	0272-9172

Other

Other	Proceedings of the MRS Spring Meeting
City	San Francisco, CA, USA
Period	4/13/93 → 4/16/93

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-297-145

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title = "High substrate temperature a-Si:H grown by DC reactive magnetron sputtering",

abstract = "We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320 to approximately 425 °C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2 to approximately 5×1015 cm-3 with H content changing from 15-10 at.% as Ts increases from 320-375 °C. For 100 hrs white light exposure at 1 W/cm2, a heavily degraded state was obtained with mid-gap state density in the range 2-3×1016 cm-3 over this Ts range. These are among the lowest values reported for intrinsic a-Si:H.",

author = "Liang, {Y. H.} and N. Maley and Abelson, {J. R.}",

year = "1993",

doi = "10.1557/proc-297-145",

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series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

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AU - Liang, Y. H.

AU - Maley, N.

AU - Abelson, J. R.

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N2 - We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320 to approximately 425 °C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2 to approximately 5×1015 cm-3 with H content changing from 15-10 at.% as Ts increases from 320-375 °C. For 100 hrs white light exposure at 1 W/cm2, a heavily degraded state was obtained with mid-gap state density in the range 2-3×1016 cm-3 over this Ts range. These are among the lowest values reported for intrinsic a-Si:H.

AB - We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320 to approximately 425 °C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2 to approximately 5×1015 cm-3 with H content changing from 15-10 at.% as Ts increases from 320-375 °C. For 100 hrs white light exposure at 1 W/cm2, a heavily degraded state was obtained with mid-gap state density in the range 2-3×1016 cm-3 over this Ts range. These are among the lowest values reported for intrinsic a-Si:H.

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High substrate temperature a-Si:H grown by DC reactive magnetron sputtering

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