High substrate temperature a-Si:H grown by DC reactive magnetron sputtering

Y. H. Liang, N. Maley, J. R. Abelson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320 to approximately 425 °C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2 to approximately 5×1015 cm-3 with H content changing from 15-10 at.% as Ts increases from 320-375 °C. For 100 hrs white light exposure at 1 W/cm2, a heavily degraded state was obtained with mid-gap state density in the range 2-3×1016 cm-3 over this Ts range. These are among the lowest values reported for intrinsic a-Si:H.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology
PublisherPubl by Materials Research Society
Pages145-150
Number of pages6
ISBN (Print)155899193X, 9781558991934
DOIs
StatePublished - 1993
EventProceedings of the MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume297
ISSN (Print)0272-9172

Other

OtherProceedings of the MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/13/934/16/93

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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