Abstract
Two dimensional smart-pixel arrays, capable of transmitting/receiving optical data at speeds above 64 Gb/s, are designed using ion implanted GaAs MESFETS and metal-semiconductor-metal (MSM) photodiodes due to their simplicity in manufacturing and high speed performance which are favorable in realizing low cost, high performance OEICs (opto-electronic integrated circuits). Two-dimensional 4×4 and 8×8 smart-pixel arrays utilizing Vitesseis HGaAs-III 0.6 μm E/D MESFET process have been developed. Fully DC coupled circuits are designed to make data transmission transparent. The simulation of the complete circuits showed that design goals of low power, high speed, high density, high sensitivity, high process and power supply tolerance are met.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 213-225 |
| Number of pages | 13 |
| Journal | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an |
| Volume | 4 |
| Issue number | 3 |
| State | Published - Aug 1997 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering