High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier

Huapu Pan, Solomon Assefa, William M.J. Green, Daniel M. Kuchta, Clint L. Schow, Alexander V. Rylyakov, Benjamin G. Lee, Christian W. Baks, Steven M. Shank, Yurii A. Vlasov

Research output: Contribution to journalArticlepeer-review

Abstract

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10-12. The receiver operates error-free (biterror-rate < 10-12) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.

Original languageEnglish (US)
Pages (from-to)18145-18155
Number of pages11
JournalOptics Express
Volume20
Issue number16
DOIs
StatePublished - Jul 30 2012
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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