High-speed planar gaas nanowire arrays with f _max > 75 GHz by wafer-scale bottom-up growth

Keyphrases

• Wafer-scale 100%
• High Electron Mobility Transistor 100%
• GaAs Nanowires Array 100%
• Array-based 100%
• Bottom-up Growth 100%
• Nanowire Arrays 66%
• Planar Nanowires 66%
• Field-effect Transistors 33%
• Carbon Nanotubes 33%
• Nanowire Technology 33%
• Gate Length 33%
• Vapor-liquid-solid 33%
• Percentage Yield 33%
• DC Performance 33%
• Growth Method 33%
• GaAs NWs 33%
• Nanoelectronics 33%
• Parallel Array 33%
• Drain Bias 33%
• Electrical Uniformity 33%
• III-V Nanowires 33%
• Cut-off Frequency 33%
• Vapor-liquid-solid Growth 33%
• Chip-level 33%
• Graphene Channels 33%
• Fmax 33%
• RF Performance 33%
• Maximum Oscillation Frequency 33%
• ION-IOFF 33%
• Double-channel 33%

Engineering

• Nanowires 100%
• Max 100%
• Gallium Arsenide 33%
• Graphene 16%
• Field-Effect Transistor 16%
• Defects 16%
• Carbon Nanotube 16%
• Gate Length 16%
• Cutoff Frequency 16%
• Nanoelectronics 16%
• Drain Bias 16%
• Growth Method 16%
• Electrical Level 16%