Abstract
We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFET's) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 53 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K.
Original language | English (US) |
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Pages (from-to) | 124-126 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 17 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering