High speed p-type SiGe modulation-doped field-effect transistors

M. Arafa; P. Fay; K. Ismail; J. O. Chu; B. S. Meyerson; I. Adesida

doi:10.1109/55.485188

High speed p-type SiGe modulation-doped field-effect transistors

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFET's) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 53 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K.

Original language	English (US)
Pages (from-to)	124-126
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	3
DOIs	https://doi.org/10.1109/55.485188
State	Published - Mar 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.485188

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title = "High speed p-type SiGe modulation-doped field-effect transistors",

abstract = "We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFET's) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 53 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K.",

author = "M. Arafa and P. Fay and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",

note = "Funding Information: Manuscript received September 8, 1995; revised November 7, 1995. This work was supported by the University of Illinois under JSEP Grant N00014-90-J-1270 and by a National Science Foundation Graduate Research Fellowship to P. Fay. M. Arafa, P. Fay, and I. Adesida are with the Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical Engineering, University of Illinois, Urbana-Champaign, IL 61801 USA. K. Ismail is with the Department of Electronics, Faculty of{\textquoteleft} Engineering, Cairo University, Giza, Egypt. 5. 0. Chu and B. S. Meyerson are with the B M T. J. Watson Research Center, Yorktown Heights, NU 10598 USA. Publisher Item Identifier S 0741-3106(96)01970-2.",

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AU - Arafa, M.

AU - Fay, P.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

AU - Adesida, I.

N1 - Funding Information: Manuscript received September 8, 1995; revised November 7, 1995. This work was supported by the University of Illinois under JSEP Grant N00014-90-J-1270 and by a National Science Foundation Graduate Research Fellowship to P. Fay. M. Arafa, P. Fay, and I. Adesida are with the Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical Engineering, University of Illinois, Urbana-Champaign, IL 61801 USA. K. Ismail is with the Department of Electronics, Faculty of‘ Engineering, Cairo University, Giza, Egypt. 5. 0. Chu and B. S. Meyerson are with the B M T. J. Watson Research Center, Yorktown Heights, NU 10598 USA. Publisher Item Identifier S 0741-3106(96)01970-2.

PY - 1996/3

Y1 - 1996/3

N2 - We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFET's) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 53 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K.

AB - We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFET's) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 53 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K.

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High speed p-type SiGe modulation-doped field-effect transistors

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