High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

The performance of monolithically integrated metal-semiconductor-metal/high electron-mobility transistor (MSM/HEMT) and p-i-n/HEMT photoreceivers is reported. p-i-n/HEMT photoreceivers have been designed and fabricated, resulting in measured transimpedances of 700 Ω, an 8.3-GHz bandwidth, and measured sensitivities of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2 31 - 1 pattern length pseudorandom bit sequence at a bit error rate of 10 -9. Low-noise MSM-based photoreceivers have also been designed and fabricated, and frequency response, noise, and sensitivity measurements have been performed. Sensitivities of -16.9, -13.1, and -10.7 dBm were obtained at 5, 8, and 10 Gb/s, respectively. A direct comparison of p-i-n- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth. Measurement and theoretical analysis of circuit and device noise indicates an anomalous sensitivity penalty in MSM-based receivers that arises due to intersymbol interference.

Original languageEnglish (US)
Pages (from-to)62-67
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume50
Issue number1 I
DOIs
StatePublished - Jan 1 2002

Keywords

  • MSM photodetectors
  • Optoelectronic integrated circuits
  • P-i-n photodiodes
  • Photoreceivers

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers'. Together they form a unique fingerprint.

Cite this