TY - JOUR
T1 - High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers
AU - Fay, P.
AU - Caneau, C.
AU - Adesida, I.
N1 - Funding Information:
Manuscript received May 17, 2000; revised March 21, 2001. This work was supported by the National Science Foundation under Grant ECD 89-43166 and by the Advanced Research Projects Agency under Grant MDA 972-941-0004. P. Fay is with the Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556 USA (e-mail: [email protected]). C. Caneau is with Corning Inc., Corning, NY 14831 USA. I. Adesida is with the Department of Electrical and Computer Engineering, Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA. Publisher Item Identifier S 0018-9480(02)00761-5.
PY - 2002/1
Y1 - 2002/1
N2 - The performance of monolithically integrated metal-semiconductor-metal/high electron-mobility transistor (MSM/HEMT) and p-i-n/HEMT photoreceivers is reported. p-i-n/HEMT photoreceivers have been designed and fabricated, resulting in measured transimpedances of 700 Ω, an 8.3-GHz bandwidth, and measured sensitivities of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2 31 - 1 pattern length pseudorandom bit sequence at a bit error rate of 10 -9. Low-noise MSM-based photoreceivers have also been designed and fabricated, and frequency response, noise, and sensitivity measurements have been performed. Sensitivities of -16.9, -13.1, and -10.7 dBm were obtained at 5, 8, and 10 Gb/s, respectively. A direct comparison of p-i-n- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth. Measurement and theoretical analysis of circuit and device noise indicates an anomalous sensitivity penalty in MSM-based receivers that arises due to intersymbol interference.
AB - The performance of monolithically integrated metal-semiconductor-metal/high electron-mobility transistor (MSM/HEMT) and p-i-n/HEMT photoreceivers is reported. p-i-n/HEMT photoreceivers have been designed and fabricated, resulting in measured transimpedances of 700 Ω, an 8.3-GHz bandwidth, and measured sensitivities of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2 31 - 1 pattern length pseudorandom bit sequence at a bit error rate of 10 -9. Low-noise MSM-based photoreceivers have also been designed and fabricated, and frequency response, noise, and sensitivity measurements have been performed. Sensitivities of -16.9, -13.1, and -10.7 dBm were obtained at 5, 8, and 10 Gb/s, respectively. A direct comparison of p-i-n- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth. Measurement and theoretical analysis of circuit and device noise indicates an anomalous sensitivity penalty in MSM-based receivers that arises due to intersymbol interference.
KW - MSM photodetectors
KW - Optoelectronic integrated circuits
KW - P-i-n photodiodes
KW - Photoreceivers
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U2 - 10.1109/22.981247
DO - 10.1109/22.981247
M3 - Article
AN - SCOPUS:0036211669
SN - 0018-9480
VL - 50
SP - 62
EP - 67
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 1 I
ER -