Abstract
The design, fabrication, and performance of monolithically integrated MSM/HEMT and PIN/HEMT photoreceivers are described. PIN/HEMT photoreceivers with 701 Ω of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 231-1 pattern length PRBS at a BER of 10-9. Low-noise MSM-based photoreceivers have also designed and fabricated, and frequency response and sensitivity measurements have been performed. A comparison of PIN- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth, and the differences in performance are analyzed.
| Original language | English (US) |
|---|---|
| Title of host publication | SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings |
| Publisher | IEEE |
| Pages | 537-540 |
| Number of pages | 4 |
| Volume | 2 |
| State | Published - 1999 |
| Event | 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings - Rio de Janeiro, Braz Duration: Aug 9 1999 → Aug 12 1999 |
Other
| Other | 1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings |
|---|---|
| City | Rio de Janeiro, Braz |
| Period | 8/9/99 → 8/12/99 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering