High-speed MSM-HEMT and PIN-HEMT monolithic photoreceivers

P. Fay, C. Caneau, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The design, fabrication, and performance of monolithically integrated MSM/HEMT and PIN/HEMT photoreceivers are described. PIN/HEMT photoreceivers with 701 Ω of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 231-1 pattern length PRBS at a BER of 10-9. Low-noise MSM-based photoreceivers have also designed and fabricated, and frequency response and sensitivity measurements have been performed. A comparison of PIN- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth, and the differences in performance are analyzed.

Original languageEnglish (US)
Title of host publicationSBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings
PublisherIEEE
Pages537-540
Number of pages4
Volume2
StatePublished - 1999
Event1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings - Rio de Janeiro, Braz
Duration: Aug 9 1999Aug 12 1999

Other

Other1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings
CityRio de Janeiro, Braz
Period8/9/998/12/99

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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