High-speed modulation of index-guided implant-confined vertical-cavity surface-emitting lasers

Chen Chen; Paul O. Leisher; Daniel M. Kuchta; Kent D. Choquette

doi:10.1109/JSTQE.2009.2016115

High-speed modulation of index-guided implant-confined vertical-cavity surface-emitting lasers

Chen Chen, Paul O. Leisher, Daniel M. Kuchta, Kent D. Choquette

Research output: Contribution to journal › Article › peer-review

Abstract

An etched photonic crystal (PhC) or holey wedge structure induces index confinement into 850-nm implant-confined vertical-cavity surface-emitting lasers (VCSELs) to engineer the spatial overlap between the optical mode and laser gain for improved high-speed operation and reduced relative intensity noise. Large-signal operation of 12.5 Gb/s is achieved with a single transverse-mode PhC VCSEL and 15 Gb/s with a single transverse-mode holey VCSEL. An excessive current diffusion effect is found when the difference between the electrical and optical diameter is large (>4 μm), which limits the large-signal modulation of single-mode VCSELs. The design rules for optimal single transverse-mode high-speed PhC and holey VCSELs are extracted from a parametric study of their large-signal modulation characteristics.

Original language	English (US)
Article number	5068464
Pages (from-to)	673-678
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/JSTQE.2009.2016115
State	Published - May 2009

Keywords

High-speed modulation
Semiconductor laser
Vertical-cavity surface-emitting laser (VCSEL)

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/JSTQE.2009.2016115

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title = "High-speed modulation of index-guided implant-confined vertical-cavity surface-emitting lasers",

abstract = "An etched photonic crystal (PhC) or holey wedge structure induces index confinement into 850-nm implant-confined vertical-cavity surface-emitting lasers (VCSELs) to engineer the spatial overlap between the optical mode and laser gain for improved high-speed operation and reduced relative intensity noise. Large-signal operation of 12.5 Gb/s is achieved with a single transverse-mode PhC VCSEL and 15 Gb/s with a single transverse-mode holey VCSEL. An excessive current diffusion effect is found when the difference between the electrical and optical diameter is large (>4 μm), which limits the large-signal modulation of single-mode VCSELs. The design rules for optimal single transverse-mode high-speed PhC and holey VCSELs are extracted from a parametric study of their large-signal modulation characteristics.",

keywords = "High-speed modulation, Semiconductor laser, Vertical-cavity surface-emitting laser (VCSEL)",

author = "Chen Chen and Leisher, {Paul O.} and Kuchta, {Daniel M.} and Choquette, {Kent D.}",

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AU - Chen, Chen

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AU - Kuchta, Daniel M.

AU - Choquette, Kent D.

PY - 2009/5

Y1 - 2009/5

N2 - An etched photonic crystal (PhC) or holey wedge structure induces index confinement into 850-nm implant-confined vertical-cavity surface-emitting lasers (VCSELs) to engineer the spatial overlap between the optical mode and laser gain for improved high-speed operation and reduced relative intensity noise. Large-signal operation of 12.5 Gb/s is achieved with a single transverse-mode PhC VCSEL and 15 Gb/s with a single transverse-mode holey VCSEL. An excessive current diffusion effect is found when the difference between the electrical and optical diameter is large (>4 μm), which limits the large-signal modulation of single-mode VCSELs. The design rules for optimal single transverse-mode high-speed PhC and holey VCSELs are extracted from a parametric study of their large-signal modulation characteristics.

AB - An etched photonic crystal (PhC) or holey wedge structure induces index confinement into 850-nm implant-confined vertical-cavity surface-emitting lasers (VCSELs) to engineer the spatial overlap between the optical mode and laser gain for improved high-speed operation and reduced relative intensity noise. Large-signal operation of 12.5 Gb/s is achieved with a single transverse-mode PhC VCSEL and 15 Gb/s with a single transverse-mode holey VCSEL. An excessive current diffusion effect is found when the difference between the electrical and optical diameter is large (>4 μm), which limits the large-signal modulation of single-mode VCSELs. The design rules for optimal single transverse-mode high-speed PhC and holey VCSELs are extracted from a parametric study of their large-signal modulation characteristics.

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KW - Semiconductor laser

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High-speed modulation of index-guided implant-confined vertical-cavity surface-emitting lasers

Abstract

Keywords

ASJC Scopus subject areas

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