High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

Jong Hyun Ahn, Hoon Sik Kim, Keon Jae Lee, Zhengtao Zhu, Etienne Menard, Ralph G. Nuzzo, John A. Rogers

Research output: Contribution to journalArticlepeer-review


This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm2/V · s, ON/OFF ratios > 105, and response frequencies > 500 MHz at channel lengths of 2 μm. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.

Original languageEnglish (US)
Pages (from-to)460-462
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2006


  • Flexible circuits
  • Printed transistors
  • Silicon-on-insulator (SOI) wafer
  • Thin film transistor (TFT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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