High-Speed Low-Noise InGaP/GaAs Heterojunction Bipolar Transistors

M. T. Fresina, D. A. Ahmari, P. J. Mares, Q. J. Hartmann, Milton Feng, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

We have demonstrated self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with excellent dc, microwave, and noise performance. A 3 × 10 μm2 emitter finger device achieved a cutoff frequency of f T= 66 GHz and a maximum’ frequency of oscillation of fmax = 109 GHz. A minimum noise. figure of 1.12 dB and an associated gain of 11 dB were measured at 4 GHz. These results are the highest combined fT+ fmax and the lowest noise figure reported for an InGaP/GaAs HBT and are attributed to material quality and the use of self-aligned base contacts. These data clearly demonstrate the viability of InGaP/GaAs HBT's for high-speed, low-noise circuit applications.

Original languageEnglish (US)
Pages (from-to)540-541
Number of pages2
JournalIEEE Electron Device Letters
Volume16
Issue number12
DOIs
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Fresina, M. T., Ahmari, D. A., Mares, P. J., Hartmann, Q. J., Feng, M., & Stillman, G. E. (1995). High-Speed Low-Noise InGaP/GaAs Heterojunction Bipolar Transistors. IEEE Electron Device Letters, 16(12), 540-541. https://doi.org/10.1109/55.475580