High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

M. T. Fresina, D. A. Ahmari, S. Thomas, D. W. Barlage, C. A. Martino, M. Feng, G. E. Stillman

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of 'High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers'. Together they form a unique fingerprint.

Physics & Astronomy

Chemical Compounds

Engineering & Materials Science