High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

M. T. Fresina, D. A. Ahmari, S. Thomas, D. W. Barlage, C. A. Martino, M. Feng, G. E. Stillman

Research output: Contribution to journalArticlepeer-review


We have demonstrated a high-speed InP/InGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon doping source enabled the formation of low resistance (pc < 2 ×10-6 Ω cm2), nonalloyed TiPtAu contacts to the heavily doped (n = 2 × 1019 cm-3) InP contacting layers. A device with a 3 × 10 μm2 emitter contact exhibited excellent dc characteristics and had fT = fmax = 107 GHz. Emitter and collector resistances are compared to a device with InGaAs contacting layers.

Original languageEnglish (US)
Pages (from-to)1637-1639
Number of pages3
JournalJournal of Electronic Materials
Issue number10
StatePublished - Oct 1996


  • Contact resistance
  • Heterojunction bipolar transistor (HBT)
  • InP/InGaAs
  • Nonalloyed contacts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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