High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

M. T. Fresina; D. A. Ahmari; S. Thomas; D. W. Barlage; C. A. Martino; M. Feng; G. E. Stillman

doi:10.1007/BF02655589

High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n⁺-InP contacting layers

M. T. Fresina, D. A. Ahmari, S. Thomas, D. W. Barlage, C. A. Martino, M. Feng, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have demonstrated a high-speed InP/InGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n⁺-InP emitter and collector contacting layers. The use of SiBr₄ as a silicon doping source enabled the formation of low resistance (p_c < 2 ×10^-6 Ω cm²), nonalloyed TiPtAu contacts to the heavily doped (n = 2 × 10¹⁹ cm^-3) InP contacting layers. A device with a 3 × 10 μm² emitter contact exhibited excellent dc characteristics and had f_T = f_max = 107 GHz. Emitter and collector resistances are compared to a device with InGaAs contacting layers.

Original language	English (US)
Pages (from-to)	1637-1639
Number of pages	3
Journal	Journal of Electronic Materials
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/BF02655589
State	Published - Oct 1996

Keywords

Contact resistance
Heterojunction bipolar transistor (HBT)
InP/InGaAs
Nonalloyed contacts

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1007/BF02655589

Library availability

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Cite this

@article{8377db24bc8f458eb0e4da77aa0cc476,

title = "High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers",

abstract = "We have demonstrated a high-speed InP/InGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon doping source enabled the formation of low resistance (pc < 2 ×10-6 Ω cm2), nonalloyed TiPtAu contacts to the heavily doped (n = 2 × 1019 cm-3) InP contacting layers. A device with a 3 × 10 μm2 emitter contact exhibited excellent dc characteristics and had fT = fmax = 107 GHz. Emitter and collector resistances are compared to a device with InGaAs contacting layers.",

keywords = "Contact resistance, Heterojunction bipolar transistor (HBT), InP/InGaAs, Nonalloyed contacts",

author = "Fresina, {M. T.} and Ahmari, {D. A.} and S. Thomas and Barlage, {D. W.} and Martino, {C. A.} and M. Feng and Stillman, {G. E.}",

year = "1996",

month = oct,

doi = "10.1007/BF02655589",

language = "English (US)",

volume = "25",

pages = "1637--1639",

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issn = "0361-5235",

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T1 - High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

AU - Fresina, M. T.

AU - Ahmari, D. A.

AU - Thomas, S.

AU - Barlage, D. W.

AU - Martino, C. A.

AU - Feng, M.

AU - Stillman, G. E.

PY - 1996/10

Y1 - 1996/10

N2 - We have demonstrated a high-speed InP/InGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon doping source enabled the formation of low resistance (pc < 2 ×10-6 Ω cm2), nonalloyed TiPtAu contacts to the heavily doped (n = 2 × 1019 cm-3) InP contacting layers. A device with a 3 × 10 μm2 emitter contact exhibited excellent dc characteristics and had fT = fmax = 107 GHz. Emitter and collector resistances are compared to a device with InGaAs contacting layers.

AB - We have demonstrated a high-speed InP/InGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon doping source enabled the formation of low resistance (pc < 2 ×10-6 Ω cm2), nonalloyed TiPtAu contacts to the heavily doped (n = 2 × 1019 cm-3) InP contacting layers. A device with a 3 × 10 μm2 emitter contact exhibited excellent dc characteristics and had fT = fmax = 107 GHz. Emitter and collector resistances are compared to a device with InGaAs contacting layers.

KW - Contact resistance

KW - Heterojunction bipolar transistor (HBT)

KW - InP/InGaAs

KW - Nonalloyed contacts

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