High-speed InGaP/GaAs HBT's with a strained InxGa1-xAs base

D. A. Ahmari; M. T. Fresina; Q. J. Hartmann; D. W. Barlage; P. J. Mares; M. Feng; G. E. Stillman

doi:10.1109/55.491837

High-speed InGaP/GaAs HBT's with a strained In_xGa_1-xAs base

D. A. Ahmari, M. T. Fresina, Q. J. Hartmann, D. W. Barlage, P. J. Mares, M. Feng, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T = 83 GHz and f_max = 197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a dc current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications.

Original language	English (US)
Pages (from-to)	226-228
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/55.491837
State	Published - May 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.491837

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Cite this

@article{884315b30bf0432faaea00775c5f676d,

title = "High-speed InGaP/GaAs HBT's with a strained InxGa1-xAs base",

abstract = "A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded InxGa1-xAs base has been demonstrated with fT = 83 GHz and fmax = 197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a dc current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high fmax results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications.",

author = "Ahmari, {D. A.} and Fresina, {M. T.} and Hartmann, {Q. J.} and Barlage, {D. W.} and Mares, {P. J.} and M. Feng and Stillman, {G. E.}",

note = "Funding Information: Manuscript received November 13, 1995; revised December 18, 1995. This work was supported by ARPA under Contract DAAH04-93-G-0172. The authors are with the Microelectronics Laboratory, University of Illinois.",

year = "1996",

month = may,

doi = "10.1109/55.491837",

language = "English (US)",

volume = "17",

pages = "226--228",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - High-speed InGaP/GaAs HBT's with a strained InxGa1-xAs base

AU - Ahmari, D. A.

AU - Fresina, M. T.

AU - Hartmann, Q. J.

AU - Barlage, D. W.

AU - Mares, P. J.

AU - Feng, M.

AU - Stillman, G. E.

N1 - Funding Information: Manuscript received November 13, 1995; revised December 18, 1995. This work was supported by ARPA under Contract DAAH04-93-G-0172. The authors are with the Microelectronics Laboratory, University of Illinois.

PY - 1996/5

Y1 - 1996/5

N2 - A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded InxGa1-xAs base has been demonstrated with fT = 83 GHz and fmax = 197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a dc current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high fmax results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications.

AB - A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded InxGa1-xAs base has been demonstrated with fT = 83 GHz and fmax = 197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a dc current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high fmax results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications.

UR - http://www.scopus.com/inward/record.url?scp=0030150861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030150861&partnerID=8YFLogxK

U2 - 10.1109/55.491837

DO - 10.1109/55.491837

M3 - Article

AN - SCOPUS:0030150861

SN - 0741-3106

VL - 17

SP - 226

EP - 228

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -