High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

Bing Ruey Wu; William Snodgrass; Milton Feng; K. Y. Cheng

doi:10.1016/j.jcrysgro.2006.11.143

High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

Bing Ruey Wu, William Snodgrass, Milton Feng, K. Y. Cheng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

InAs-InGaAs graded emitter contact layer was incorporated into the InGaAsSb-GaAsSb/InP graded base double heterojunction bipolar transistors (DHBTs). Compared to a uniform In_0.53Ga_0.47As emitter contact layer, the graded InAs-InGaAs emitter contact layer effectively reduced specific contact resistance from 0.378 to 0.091 Ω-μm². Measured sheet resistance also decreased from 58.3 to 47.4 Ω/□. A graded base DHBT with a 0.5×8 μm² emitter showed a unity current gain cutoff frequency (f_T) and maximum oscillation frequency (f_MAX) of 500 GHz and 260 GHz, respectively. The f_MAX improves to 350 GHz when a smaller (0.4×3 μm²) emitter is utilized.

Original language	English (US)
Pages (from-to)	1005-1008
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.143
State	Published - Apr 2007

Keywords

A3. Molecular beam epitaxy
B2. Semiconducting indium phosphide
B3. Bipolar transistors
B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Online availability

10.1016/j.jcrysgro.2006.11.143

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@article{2b3a47de5f9b43d1943cc1270ba0d02b,

title = "High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers",

abstract = "InAs-InGaAs graded emitter contact layer was incorporated into the InGaAsSb-GaAsSb/InP graded base double heterojunction bipolar transistors (DHBTs). Compared to a uniform In0.53Ga0.47As emitter contact layer, the graded InAs-InGaAs emitter contact layer effectively reduced specific contact resistance from 0.378 to 0.091 Ω-μm2. Measured sheet resistance also decreased from 58.3 to 47.4 Ω/□. A graded base DHBT with a 0.5×8 μm2 emitter showed a unity current gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) of 500 GHz and 260 GHz, respectively. The fMAX improves to 350 GHz when a smaller (0.4×3 μm2) emitter is utilized.",

keywords = "A3. Molecular beam epitaxy, B2. Semiconducting indium phosphide, B3. Bipolar transistors, B3. Heterojunction semiconductor devices",

author = "Wu, {Bing Ruey} and William Snodgrass and Milton Feng and Cheng, {K. Y.}",

note = "Funding Information: This study is supported by DARPA through the University Photonics Research Center for Hyper-Uniform Nano-photonics Technology (HUNT Center, HR0011-04-1-0034) program. B.W. is grateful for the support of Semiconductor Research Corporation Fellowship. W.S. is grateful to University of Illinois Diffenbaugh Fellowship. M.F. is grateful for the support of the Nick Holonyak, Jr. Chair Professorship. ",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.143",

language = "English (US)",

volume = "301-302",

pages = "1005--1008",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "SPEC. ISS.",

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TY - JOUR

T1 - High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

AU - Wu, Bing Ruey

AU - Snodgrass, William

AU - Feng, Milton

AU - Cheng, K. Y.

N1 - Funding Information: This study is supported by DARPA through the University Photonics Research Center for Hyper-Uniform Nano-photonics Technology (HUNT Center, HR0011-04-1-0034) program. B.W. is grateful for the support of Semiconductor Research Corporation Fellowship. W.S. is grateful to University of Illinois Diffenbaugh Fellowship. M.F. is grateful for the support of the Nick Holonyak, Jr. Chair Professorship.

PY - 2007/4

Y1 - 2007/4

N2 - InAs-InGaAs graded emitter contact layer was incorporated into the InGaAsSb-GaAsSb/InP graded base double heterojunction bipolar transistors (DHBTs). Compared to a uniform In0.53Ga0.47As emitter contact layer, the graded InAs-InGaAs emitter contact layer effectively reduced specific contact resistance from 0.378 to 0.091 Ω-μm2. Measured sheet resistance also decreased from 58.3 to 47.4 Ω/□. A graded base DHBT with a 0.5×8 μm2 emitter showed a unity current gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) of 500 GHz and 260 GHz, respectively. The fMAX improves to 350 GHz when a smaller (0.4×3 μm2) emitter is utilized.

AB - InAs-InGaAs graded emitter contact layer was incorporated into the InGaAsSb-GaAsSb/InP graded base double heterojunction bipolar transistors (DHBTs). Compared to a uniform In0.53Ga0.47As emitter contact layer, the graded InAs-InGaAs emitter contact layer effectively reduced specific contact resistance from 0.378 to 0.091 Ω-μm2. Measured sheet resistance also decreased from 58.3 to 47.4 Ω/□. A graded base DHBT with a 0.5×8 μm2 emitter showed a unity current gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) of 500 GHz and 260 GHz, respectively. The fMAX improves to 350 GHz when a smaller (0.4×3 μm2) emitter is utilized.

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting indium phosphide

KW - B3. Bipolar transistors

KW - B3. Heterojunction semiconductor devices

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JO - Journal of Crystal Growth

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ER -

High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

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