High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

W. A. Wohlmuth; P. Fay; K. Vaccaro; E. A. Martin; I. Adesida

doi:10.1109/68.588184

High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

W. A. Wohlmuth, P. Fay, K. Vaccaro, E. A. Martin, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 μm, the bandwidth was found to increase by approximately a factor of 2, while the responsivity was found to decrease by almost a factor of 3 from 0.29 to 0.10 A/W at a bias of -5 V. Devices with an electrode width and spacing of 1 μm and a 0.25-μm absorption layer displayed a bandwidth of 19.5 GHz when biased at -15 V under front-side illumination with 1.55-μm light.

Original language	English (US)
Pages (from-to)	654-656
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	5
DOIs	https://doi.org/10.1109/68.588184
State	Published - May 1997
Externally published	Yes

Keywords

Metal-semiconductor-metal (MSM)
Photodetectors
Photodiodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.588184

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title = "High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers",

abstract = "The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 μm, the bandwidth was found to increase by approximately a factor of 2, while the responsivity was found to decrease by almost a factor of 3 from 0.29 to 0.10 A/W at a bias of -5 V. Devices with an electrode width and spacing of 1 μm and a 0.25-μm absorption layer displayed a bandwidth of 19.5 GHz when biased at -15 V under front-side illumination with 1.55-μm light.",

keywords = "Metal-semiconductor-metal (MSM), Photodetectors, Photodiodes",

author = "Wohlmuth, {W. A.} and P. Fay and K. Vaccaro and Martin, {E. A.} and I. Adesida",

note = "Funding Information: Manuscript received October 17, 1996, revised January 14, 1997 This work was supported by the Advanced Research Projects Agency Grant MDA 972-941-0004 and the National Science Foundation Grant ECD 89-43166 W A Wohlmuth, P Fay, and I Adesida are with the Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61501 USA K Vaccaro and E A Martin are with the USAF Rome Laboratory, Hanscom AFB, MA 01731 USA Publisher Item Identifier S 1041-1 135(97)03256-4",

year = "1997",

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doi = "10.1109/68.588184",

language = "English (US)",

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pages = "654--656",

journal = "IEEE Photonics Technology Letters",

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AU - Wohlmuth, W. A.

AU - Fay, P.

AU - Vaccaro, K.

AU - Martin, E. A.

AU - Adesida, I.

N1 - Funding Information: Manuscript received October 17, 1996, revised January 14, 1997 This work was supported by the Advanced Research Projects Agency Grant MDA 972-941-0004 and the National Science Foundation Grant ECD 89-43166 W A Wohlmuth, P Fay, and I Adesida are with the Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61501 USA K Vaccaro and E A Martin are with the USAF Rome Laboratory, Hanscom AFB, MA 01731 USA Publisher Item Identifier S 1041-1 135(97)03256-4

PY - 1997/5

Y1 - 1997/5

N2 - The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 μm, the bandwidth was found to increase by approximately a factor of 2, while the responsivity was found to decrease by almost a factor of 3 from 0.29 to 0.10 A/W at a bias of -5 V. Devices with an electrode width and spacing of 1 μm and a 0.25-μm absorption layer displayed a bandwidth of 19.5 GHz when biased at -15 V under front-side illumination with 1.55-μm light.

AB - The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 μm, the bandwidth was found to increase by approximately a factor of 2, while the responsivity was found to decrease by almost a factor of 3 from 0.29 to 0.10 A/W at a bias of -5 V. Devices with an electrode width and spacing of 1 μm and a 0.25-μm absorption layer displayed a bandwidth of 19.5 GHz when biased at -15 V under front-side illumination with 1.55-μm light.

KW - Metal-semiconductor-metal (MSM)

KW - Photodetectors

KW - Photodiodes

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High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

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