High-speed InGaAs-based vertical Schottky barrier photodetectors

W. Wohlmuth; J. W. Seo; P. Fay; C. Caneau; I. Adesida

High-speed InGaAs-based vertical Schottky barrier photodetectors

W. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida

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Abstract

A high speed and high responsivity vertical InGaAs-based Schottky photodetector was designed and fabricated It utilizes a lattice matched InAlAs Schottky barrier height enhancement layer and a film of indium tin oxide (ITO) to form both a Schottky contact and an antireflective coating to 1.31 μm optical radiation. Responsivities of up to 0.59 A/W were obtained in conjunction with dark current densities below 1.10^-4 A/cm² and 3-db bandwidths of 25 GHz.

Original language	English (US)
Pages (from-to)	490-493
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1997
Event	Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: May 11 1997 → May 15 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "High-speed InGaAs-based vertical Schottky barrier photodetectors",

abstract = "A high speed and high responsivity vertical InGaAs-based Schottky photodetector was designed and fabricated It utilizes a lattice matched InAlAs Schottky barrier height enhancement layer and a film of indium tin oxide (ITO) to form both a Schottky contact and an antireflective coating to 1.31 μm optical radiation. Responsivities of up to 0.59 A/W were obtained in conjunction with dark current densities below 1.10-4 A/cm2 and 3-db bandwidths of 25 GHz.",

author = "W. Wohlmuth and Seo, {J. W.} and P. Fay and C. Caneau and I. Adesida",

year = "1997",

language = "English (US)",

pages = "490--493",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-1997 Through 15-05-1997",

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TY - JOUR

T1 - High-speed InGaAs-based vertical Schottky barrier photodetectors

AU - Wohlmuth, W.

AU - Seo, J. W.

AU - Fay, P.

AU - Caneau, C.

AU - Adesida, I.

PY - 1997

Y1 - 1997

N2 - A high speed and high responsivity vertical InGaAs-based Schottky photodetector was designed and fabricated It utilizes a lattice matched InAlAs Schottky barrier height enhancement layer and a film of indium tin oxide (ITO) to form both a Schottky contact and an antireflective coating to 1.31 μm optical radiation. Responsivities of up to 0.59 A/W were obtained in conjunction with dark current densities below 1.10-4 A/cm2 and 3-db bandwidths of 25 GHz.

AB - A high speed and high responsivity vertical InGaAs-based Schottky photodetector was designed and fabricated It utilizes a lattice matched InAlAs Schottky barrier height enhancement layer and a film of indium tin oxide (ITO) to form both a Schottky contact and an antireflective coating to 1.31 μm optical radiation. Responsivities of up to 0.59 A/W were obtained in conjunction with dark current densities below 1.10-4 A/cm2 and 3-db bandwidths of 25 GHz.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030646577&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030646577

SN - 1092-8669

SP - 490

EP - 493

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 1997 through 15 May 1997

ER -

High-speed InGaAs-based vertical Schottky barrier photodetectors

Abstract

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