High-speed InGaAs-based vertical Schottky barrier photodetectors

W. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, Ilesanmi Adesida

Research output: Contribution to journalConference article

Abstract

A high speed and high responsivity vertical InGaAs-based Schottky photodetector was designed and fabricated It utilizes a lattice matched InAlAs Schottky barrier height enhancement layer and a film of indium tin oxide (ITO) to form both a Schottky contact and an antireflective coating to 1.31 μm optical radiation. Responsivities of up to 0.59 A/W were obtained in conjunction with dark current densities below 1.10-4 A/cm2 and 3-db bandwidths of 25 GHz.

Original languageEnglish (US)
Pages (from-to)490-493
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Jan 1 1997
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: May 11 1997May 15 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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