High single mode operation from hybrid ion implanted/selectively oxidized VCSELs

Kent D. Choquette; A. J. Fischer; K. M. Geib; G. R. Hadley; A. A. Allerman; J. J. Hindi

High single mode operation from hybrid ion implanted/selectively oxidized VCSELs

Kent D. Choquette, A. J. Fischer, K. M. Geib, G. R. Hadley, A. A. Allerman, J. J. Hindi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Selectively oxidized vertical cavity surface emitting lasers (VCSEL) typically operate in multiple transverse optical modes. High power VCSEL operation is desirable for many applications such as optical storage and printing, modulation spectroscopy, bar code scanning, and data communication over single mode optical fiber. The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. A VCSEL fabricated via hybrid ion implantation and selective oxidation device structure is designed to demonstrate a single mode output of more than 5 mW for 850 nm.

Original language	English (US)
Pages (from-to)	59-60
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{2fb2a1b0215f4b93b04e8221fba40d30,

title = "High single mode operation from hybrid ion implanted/selectively oxidized VCSELs",

abstract = "Selectively oxidized vertical cavity surface emitting lasers (VCSEL) typically operate in multiple transverse optical modes. High power VCSEL operation is desirable for many applications such as optical storage and printing, modulation spectroscopy, bar code scanning, and data communication over single mode optical fiber. The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. A VCSEL fabricated via hybrid ion implantation and selective oxidation device structure is designed to demonstrate a single mode output of more than 5 mW for 850 nm.",

author = "Choquette, {Kent D.} and Fischer, {A. J.} and Geib, {K. M.} and Hadley, {G. R.} and Allerman, {A. A.} and Hindi, {J. J.}",

year = "2000",

language = "English (US)",

pages = "59--60",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - High single mode operation from hybrid ion implanted/selectively oxidized VCSELs

AU - Choquette, Kent D.

AU - Fischer, A. J.

AU - Geib, K. M.

AU - Hadley, G. R.

AU - Allerman, A. A.

AU - Hindi, J. J.

PY - 2000

Y1 - 2000

N2 - Selectively oxidized vertical cavity surface emitting lasers (VCSEL) typically operate in multiple transverse optical modes. High power VCSEL operation is desirable for many applications such as optical storage and printing, modulation spectroscopy, bar code scanning, and data communication over single mode optical fiber. The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. A VCSEL fabricated via hybrid ion implantation and selective oxidation device structure is designed to demonstrate a single mode output of more than 5 mW for 850 nm.

AB - Selectively oxidized vertical cavity surface emitting lasers (VCSEL) typically operate in multiple transverse optical modes. High power VCSEL operation is desirable for many applications such as optical storage and printing, modulation spectroscopy, bar code scanning, and data communication over single mode optical fiber. The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. A VCSEL fabricated via hybrid ion implantation and selective oxidation device structure is designed to demonstrate a single mode output of more than 5 mW for 850 nm.

UR - http://www.scopus.com/inward/record.url?scp=0034471229&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034471229&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034471229

SN - 0899-9406

SP - 59

EP - 60

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

High single mode operation from hybrid ion implanted/selectively oxidized VCSELs

Abstract

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