High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

Steffi Deiter; Helvi Witek; Nikolay Oleynik; Jürgen Bläsing; Armin Dadgar; Alois Krost

doi:10.1524/zkri.219.4.187.30445

High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

Steffi Deiter, Helvi Witek, Nikolay Oleynik, Jürgen Bläsing, Armin Dadgar, Alois Krost

Research output: Contribution to journal › Article › peer-review

Abstract

High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

Original language	English (US)
Pages (from-to)	187-190
Number of pages	4
Journal	Zeitschrift fur Kristallographie
Volume	219
Issue number	4
DOIs	https://doi.org/10.1524/zkri.219.4.187.30445
State	Published - 2004
Externally published	Yes

Keywords

Metalorganic vapour phase epitaxy
X-ray diffraction
Zinc oxide

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Inorganic Chemistry

Online availability

10.1524/zkri.219.4.187.30445

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abstract = "High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.",

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author = "Steffi Deiter and Helvi Witek and Nikolay Oleynik and J{\"u}rgen Bl{\"a}sing and Armin Dadgar and Alois Krost",

note = "Funding Information: Acknowledgments. This work was supported by the German government BMBF under contract number 01BM150.",

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doi = "10.1524/zkri.219.4.187.30445",

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T1 - High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

AU - Deiter, Steffi

AU - Witek, Helvi

AU - Oleynik, Nikolay

AU - Bläsing, Jürgen

AU - Dadgar, Armin

AU - Krost, Alois

N1 - Funding Information: Acknowledgments. This work was supported by the German government BMBF under contract number 01BM150.

PY - 2004

Y1 - 2004

N2 - High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

AB - High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

KW - Metalorganic vapour phase epitaxy

KW - X-ray diffraction

KW - Zinc oxide

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High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

Abstract

Keywords

ASJC Scopus subject areas

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