High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

Steffi Deiter, Helvi Witek, Nikolay Oleynik, Jürgen Bläsing, Armin Dadgar, Alois Krost

Research output: Contribution to journalArticlepeer-review


High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

Original languageEnglish (US)
Pages (from-to)187-190
Number of pages4
JournalZeitschrift fur Kristallographie
Issue number4
StatePublished - 2004
Externally publishedYes


  • Metalorganic vapour phase epitaxy
  • X-ray diffraction
  • Zinc oxide

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Inorganic Chemistry


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