High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Yueh Lin Loo; Julia W.P. Hsu; Robert L. Willett; Kirk W. Baldwin; Ken W. West; John A. Rogers

doi:10.1116/1.1523405

High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Yueh Lin Loo, Julia W.P. Hsu, Robert L. Willett, Kirk W. Baldwin, Ken W. West, John A. Rogers

Research output: Contribution to journal › Article › peer-review

Abstract

Nanotransfer printing is a highly versatile contact printing technique capable of nanoscale resolution over large areas. This paper describes its use with a compound semiconductor substrate. With a 1,8-octanedithiol monolayer, gold patterns are transferred from elastomeric stamps onto different cryatallographic planes of GaAs. Pattern transfer is fast (<15 s) and occurs at ambient conditions.

Original language	English (US)
Pages (from-to)	2853-2856
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1523405
State	Published - Nov 2002
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1523405

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AU - West, Ken W.

AU - Rogers, John A.

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AB - Nanotransfer printing is a highly versatile contact printing technique capable of nanoscale resolution over large areas. This paper describes its use with a compound semiconductor substrate. With a 1,8-octanedithiol monolayer, gold patterns are transferred from elastomeric stamps onto different cryatallographic planes of GaAs. Pattern transfer is fast (<15 s) and occurs at ambient conditions.

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High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Abstract

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