High resolution microresonator-based digital temperature sensor

C. M. Jha; G. Bahl; R. Melamud; S. A. Chandorkar; M. A. Hopcroft; B. Kim; M. Agarwal; J. Salvia; H. Mehta; T. W. Kenny

doi:10.1063/1.2768629

High resolution microresonator-based digital temperature sensor

C. M. Jha, G. Bahl, R. Melamud, S. A. Chandorkar, M. A. Hopcroft, B. Kim, M. Agarwal, J. Salvia, H. Mehta, T. W. Kenny

Research output: Contribution to journal › Article › peer-review

Abstract

A digital temperature sensing technique using a complementary metal oxide semiconductor (CMOS) compatible encapsulated microresonator is presented. This technique leverages our ability to select the temperature dependence of the resonant frequency for micromechanical silicon resonators by adjusting the relative thickness of a Si O2 compensating layer. A dual-resonator design is described that includes a pair of resonators with differential temperature compensations so that the difference between the two resonant frequencies is a sensitive function of temperature. The authors demonstrate a temperature resolution of approximately 0.008 °C for 1 s averaging time, which is better than that of the best CMOS temperature sensors available today.

Original language	English (US)
Article number	074101
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2768629
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2768629

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@article{1fac1136b4b74a31bed403f950261945,

title = "High resolution microresonator-based digital temperature sensor",

abstract = "A digital temperature sensing technique using a complementary metal oxide semiconductor (CMOS) compatible encapsulated microresonator is presented. This technique leverages our ability to select the temperature dependence of the resonant frequency for micromechanical silicon resonators by adjusting the relative thickness of a Si O2 compensating layer. A dual-resonator design is described that includes a pair of resonators with differential temperature compensations so that the difference between the two resonant frequencies is a sensitive function of temperature. The authors demonstrate a temperature resolution of approximately 0.008 °C for 1 s averaging time, which is better than that of the best CMOS temperature sensors available today.",

author = "Jha, {C. M.} and G. Bahl and R. Melamud and Chandorkar, {S. A.} and Hopcroft, {M. A.} and B. Kim and M. Agarwal and J. Salvia and H. Mehta and Kenny, {T. W.}",

note = "Funding Information: This work was supported by DARPA HERMIT (ONRN66001-03-1-8942), the Robert Bosch Corporation Palo Alto RTC, a CIS Seed Grant, The National Nanofabrication Users Network facilities funded by the National Science Foundation under Award No. ECS-9731294, and The National Science Foundation Instrumentation for Materials Research Program (DMR 9504099).",

year = "2007",

doi = "10.1063/1.2768629",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - High resolution microresonator-based digital temperature sensor

AU - Jha, C. M.

AU - Bahl, G.

AU - Melamud, R.

AU - Chandorkar, S. A.

AU - Hopcroft, M. A.

AU - Kim, B.

AU - Agarwal, M.

AU - Salvia, J.

AU - Mehta, H.

AU - Kenny, T. W.

N1 - Funding Information: This work was supported by DARPA HERMIT (ONRN66001-03-1-8942), the Robert Bosch Corporation Palo Alto RTC, a CIS Seed Grant, The National Nanofabrication Users Network facilities funded by the National Science Foundation under Award No. ECS-9731294, and The National Science Foundation Instrumentation for Materials Research Program (DMR 9504099).

PY - 2007

Y1 - 2007

N2 - A digital temperature sensing technique using a complementary metal oxide semiconductor (CMOS) compatible encapsulated microresonator is presented. This technique leverages our ability to select the temperature dependence of the resonant frequency for micromechanical silicon resonators by adjusting the relative thickness of a Si O2 compensating layer. A dual-resonator design is described that includes a pair of resonators with differential temperature compensations so that the difference between the two resonant frequencies is a sensitive function of temperature. The authors demonstrate a temperature resolution of approximately 0.008 °C for 1 s averaging time, which is better than that of the best CMOS temperature sensors available today.

AB - A digital temperature sensing technique using a complementary metal oxide semiconductor (CMOS) compatible encapsulated microresonator is presented. This technique leverages our ability to select the temperature dependence of the resonant frequency for micromechanical silicon resonators by adjusting the relative thickness of a Si O2 compensating layer. A dual-resonator design is described that includes a pair of resonators with differential temperature compensations so that the difference between the two resonant frequencies is a sensitive function of temperature. The authors demonstrate a temperature resolution of approximately 0.008 °C for 1 s averaging time, which is better than that of the best CMOS temperature sensors available today.

UR - http://www.scopus.com/inward/record.url?scp=34548045073&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548045073&partnerID=8YFLogxK

U2 - 10.1063/1.2768629

DO - 10.1063/1.2768629

M3 - Article

AN - SCOPUS:34548045073

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 074101

ER -

High resolution microresonator-based digital temperature sensor

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