High rate etching of SiC using inductively coupled plasma reactive ion etching in SF₆-based gas mixtures

Inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using SF₆ plasmas. Etch rates were studied as a function of substrate bias voltage (-3 to -500 V), ICP coil power (500-900 W), and chamber pressure (1-6 mT). The highest etch rate (970 nm/min) for SiC yet reported was achieved. Anisotropic etch profiles with highly smooth surfaces free of micromasking effects were obtained. The addition of O₂ to the SF₆ plasma was found to slightly increase the etch rate.