High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, C. Kim, K. H. Shim, O. Gluschenkov, K. Kim, M. C. Yoo

Research output: Contribution to journalConference article

Abstract

p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4×1020 cm-3, and for the same sample, the mobility was 2.5 cm2/V·s. It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallic-type conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

Original languageEnglish (US)
Pages (from-to)385-390
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume423
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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