High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

Daniel J. Ironside, Alec M. Skipper, Thomas A. Leonard, Marina Radulaski, Tomas Sarmiento, Pankul Dhingra, Minjoo L. Lee, Jelena Vučković, Seth R. Bank

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate for the first time an entirely molecular beam epitaxy (MBE) approach to high-quality GaAs planar coalescence over embedded dielectric microstructures. Specifically, an all-MBE approach was achieved by developing a new two-stage growth process, merging the MBE growth regimes of III-flux modulated lateral epitaxial overgrowth (LEO) with self-ordered planarization of nonplanar substrates to produce highly selective planar coalescence specifically for embedding [010]-aligned silica gratings patterned on (001) substrates. The resulting planar coalescence returned a smooth (001) surface with surface roughness as low as 3 nm root-mean-square and photoluminescence (PL) equivalent to grating-free controls. In demonstrating high-quality GaAs coalescence, we also report for the first time an intentionally enhanced single InGaAs/GaAs/AlAs quantum well PL test structure seamlessly grown directly above embedded silica gratings, leading to a 1.4× enhancement in PL as a result of both Purcell and extraction enhancements corroborated by time-resolved PL studies. As a result, we provide a significant advance to the long-standing challenge of marrying high-quality semiconductor crystal growth with dielectric microstructures, unlocking several high-impact applications, such as enhanced quantum emitters and embedded metasurfaces for quantum information processing, and provide a pathway for all-MBE metamorphic III-V heteroepitaxy.

Original languageEnglish (US)
Pages (from-to)3085-3091
Number of pages7
JournalCrystal Growth and Design
Volume19
Issue number6
DOIs
StatePublished - Jun 5 2019

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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