High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Sopan Joshi, Sami Hyvonen, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

Radio frequency and broad-band I/O circuit designers may compensate for the capacitance of electrostatic discharge (ESD) protection elements by designing them into tuned resonators or matched filters, thereby requiring that the protection device capacitance have a high quality factor (Q). In this paper, we explore several ESD protection device options, focusing on improvement in Q. We show that surrounding a grounded-gate nMOS transistor with a deep trench increases its Q, while adding a trigger circuit decreases it. We also show that SiGe diodes are preferred over SiGe n-p-n devices. A detailed analysis of experimental results is provided.

Original languageEnglish (US)
Pages (from-to)1484-1488
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume52
Issue number7
DOIs
StatePublished - Jul 1 2005

Fingerprint

Electrostatic discharge
Capacitance
Trigger circuits
Matched filters
Resonators
Transistors
Diodes
Networks (circuits)

Keywords

  • Broadband integrated circuits
  • Electrostatic discharge protection
  • Quality factor
  • RF integrated circuits

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins. / Joshi, Sopan; Hyvonen, Sami; Rosenbaum, Elyse.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 7, 01.07.2005, p. 1484-1488.

Research output: Contribution to journalArticle

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