High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Sopan Joshi; Sami Hyvonen; Elyse Rosenbaum

doi:10.1109/TED.2005.850688

High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Sopan Joshi, Sami Hyvonen, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

Radio frequency and broad-band I/O circuit designers may compensate for the capacitance of electrostatic discharge (ESD) protection elements by designing them into tuned resonators or matched filters, thereby requiring that the protection device capacitance have a high quality factor (Q). In this paper, we explore several ESD protection device options, focusing on improvement in Q. We show that surrounding a grounded-gate nMOS transistor with a deep trench increases its Q, while adding a trigger circuit decreases it. We also show that SiGe diodes are preferred over SiGe n-p-n devices. A detailed analysis of experimental results is provided.

Original language	English (US)
Pages (from-to)	1484-1488
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	7
DOIs	https://doi.org/10.1109/TED.2005.850688
State	Published - Jul 2005

Keywords

Broadband integrated circuits
Electrostatic discharge protection
Quality factor
RF integrated circuits

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/TED.2005.850688

Library availability

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@article{f6283975fe694382a777ad6865a117ff,

title = "High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins",

abstract = "Radio frequency and broad-band I/O circuit designers may compensate for the capacitance of electrostatic discharge (ESD) protection elements by designing them into tuned resonators or matched filters, thereby requiring that the protection device capacitance have a high quality factor (Q). In this paper, we explore several ESD protection device options, focusing on improvement in Q. We show that surrounding a grounded-gate nMOS transistor with a deep trench increases its Q, while adding a trigger circuit decreases it. We also show that SiGe diodes are preferred over SiGe n-p-n devices. A detailed analysis of experimental results is provided.",

keywords = "Broadband integrated circuits, Electrostatic discharge protection, Quality factor, RF integrated circuits",

author = "Sopan Joshi and Sami Hyvonen and Elyse Rosenbaum",

note = "Funding Information: Dr. Joshi has been the recipient of a National Merit Scholarship at Stanford University, the E. A. Reid Fellowship from the University of Illinois, and a Best Student Paper award from the EOS/ESD Symposium. Funding Information: Manuscript received March 26, 2004; revised August 11, 2004. This work was supported by a grant from the Semiconductor Research Corporation. The review of this paper was arranged by Editor A. Wang.",

year = "2005",

month = jul,

doi = "10.1109/TED.2005.850688",

language = "English (US)",

volume = "52",

pages = "1484--1488",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

AU - Joshi, Sopan

AU - Hyvonen, Sami

AU - Rosenbaum, Elyse

N1 - Funding Information: Dr. Joshi has been the recipient of a National Merit Scholarship at Stanford University, the E. A. Reid Fellowship from the University of Illinois, and a Best Student Paper award from the EOS/ESD Symposium. Funding Information: Manuscript received March 26, 2004; revised August 11, 2004. This work was supported by a grant from the Semiconductor Research Corporation. The review of this paper was arranged by Editor A. Wang.

PY - 2005/7

Y1 - 2005/7

N2 - Radio frequency and broad-band I/O circuit designers may compensate for the capacitance of electrostatic discharge (ESD) protection elements by designing them into tuned resonators or matched filters, thereby requiring that the protection device capacitance have a high quality factor (Q). In this paper, we explore several ESD protection device options, focusing on improvement in Q. We show that surrounding a grounded-gate nMOS transistor with a deep trench increases its Q, while adding a trigger circuit decreases it. We also show that SiGe diodes are preferred over SiGe n-p-n devices. A detailed analysis of experimental results is provided.

AB - Radio frequency and broad-band I/O circuit designers may compensate for the capacitance of electrostatic discharge (ESD) protection elements by designing them into tuned resonators or matched filters, thereby requiring that the protection device capacitance have a high quality factor (Q). In this paper, we explore several ESD protection device options, focusing on improvement in Q. We show that surrounding a grounded-gate nMOS transistor with a deep trench increases its Q, while adding a trigger circuit decreases it. We also show that SiGe diodes are preferred over SiGe n-p-n devices. A detailed analysis of experimental results is provided.

KW - Broadband integrated circuits

KW - Electrostatic discharge protection

KW - Quality factor

KW - RF integrated circuits

UR - http://www.scopus.com/inward/record.url?scp=23944467349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23944467349&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.850688

DO - 10.1109/TED.2005.850688

M3 - Article

AN - SCOPUS:23944467349

SN - 0018-9383

VL - 52

SP - 1484

EP - 1488

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins

Abstract

Keywords

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