Abstract
One method of providing the mode selectivity necessary to insure single mode operation in a large diameter VCSEL is to independently control the size of the gain region and that of the optical mode. Numerical simulations quantity this approach by predicting lateral mode discrimination for different sized gain apertures. Calculations are experimentally confirmed by the fabrication and testing of 850 nm VCSELs employing hybrid ion implantation/selective oxidation that produce a single-mode output of more than 5 mW.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 804-805 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 2000 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering