@article{512f15d8ef174950ad367c5077ff0286,
title = "High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor",
abstract = "We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFET's). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors.",
author = "Q. Chen and Yang, {J. W.} and R. Gaska and {Asif Khan}, M. and Shur, {Michael S.} and Sullivan, {G. J.} and Sailor, {A. L.} and Higgings, {J. A.} and Ping, {A. T.} and I. Adesida",
note = "Funding Information: Manuscript received June 12, 1996; revised July 17, 1997. This work was supported by BMDO (program Manager Dr. K. Wu) under Army Contract DASG60-96-C-0009 (monitored by S. Hammonds and Dr. G. Chambers of the U.S. Army). Q. Chen, J. W. Yang, and R. Gaska are with APA Optics, Inc., Blaine, MN 55449 USA. M. Asif Khan was with APA Optics, Inc., Blaine, MN 55449 USA. He is now with the Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 USA. M. S. Shur is with the Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590 USA. G. J. Sullivan, A. L. Sailor, and J. A. Higgins are with Rockwell Science Center, Thousand Oaks, CA 91360 USA. A. T. Ping and I. Adesida are with the Department of Electrical Engineering, University of Illinois, Urbana, IL 61801 USA. Publisher Item Identifier S 0741-3106(98)01361-5.",
year = "1998",
month = feb,
doi = "10.1109/55.658598",
language = "English (US)",
volume = "19",
pages = "44--46",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}