High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

Q. Chen, J. W. Yang, R. Gaska, M. Asif Khan, Michael S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgings, A. T. Ping, I. Adesida

Research output: Contribution to journalArticle

Abstract

We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFET's). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors.

Original languageEnglish (US)
Pages (from-to)44-46
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number2
DOIs
StatePublished - Feb 1 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, Q., Yang, J. W., Gaska, R., Asif Khan, M., Shur, M. S., Sullivan, G. J., Sailor, A. L., Higgings, J. A., Ping, A. T., & Adesida, I. (1998). High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor. IEEE Electron Device Letters, 19(2), 44-46. https://doi.org/10.1109/55.658598