High performance wide-bandgap photonic and electronic devices grown by MBE

A. M. Dabiran; A. Osinsky; B. Hertog; M. Z. Kauser; P. P. Chow; V. Kumar; I. Adesida

High performance wide-bandgap photonic and electronic devices grown by MBE

A. M. Dabiran
, A. Osinsky
, B. Hertog
, M. Z. Kauser
, P. P. Chow
, V. Kumar
, I. Adesida

Office of the Provost and Executive Vice Chancellor

Research output: Contribution to conference › Paper › peer-review

Abstract

The growth of the high-performance III-N electronic and optoelectronic devices using chemical vapor deposition technique was discussed. It was observed that adding indium in the channel of the AlGan/GaN HEMT structures can lead to more stable operation at high microwave powers with low power collapse. It was also observed that application of -1 volt bias resulted in an enhancement of the negative photoresponse below 300nm and reduction of the positive component of the photocurrent. It was suggested that growth conditions need to be adjusted to achieve comparable film quality of In-doped AlGaN/GaN HEMT structures.

Original language	English (US)
Pages	179-181
Number of pages	3
State	Published - 2003
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: Oct 12 2003 → Oct 17 2003

Other

Other	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	10/12/03 → 10/17/03

ASJC Scopus subject areas

General Engineering

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Dabiran, A. M., Osinsky, A., Hertog, B., Kauser, M. Z., Chow, P. P., Kumar, V., & Adesida, I. (2003). High performance wide-bandgap photonic and electronic devices grown by MBE. 179-181. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

High performance wide-bandgap photonic and electronic devices grown by MBE. / Dabiran, A. M.; Osinsky, A.; Hertog, B. et al.
2003. 179-181 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

Dabiran, AM, Osinsky, A, Hertog, B, Kauser, MZ, Chow, PP, Kumar, V & Adesida, I 2003, 'High performance wide-bandgap photonic and electronic devices grown by MBE', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 10/12/03 - 10/17/03 pp. 179-181.

Dabiran AM, Osinsky A, Hertog B, Kauser MZ, Chow PP, Kumar V et al.. High performance wide-bandgap photonic and electronic devices grown by MBE. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

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abstract = "The growth of the high-performance III-N electronic and optoelectronic devices using chemical vapor deposition technique was discussed. It was observed that adding indium in the channel of the AlGan/GaN HEMT structures can lead to more stable operation at high microwave powers with low power collapse. It was also observed that application of -1 volt bias resulted in an enhancement of the negative photoresponse below 300nm and reduction of the positive component of the photocurrent. It was suggested that growth conditions need to be adjusted to achieve comparable film quality of In-doped AlGaN/GaN HEMT structures.",

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note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

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AU - Dabiran, A. M.

AU - Osinsky, A.

AU - Hertog, B.

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AU - Chow, P. P.

AU - Kumar, V.

AU - Adesida, I.

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AB - The growth of the high-performance III-N electronic and optoelectronic devices using chemical vapor deposition technique was discussed. It was observed that adding indium in the channel of the AlGan/GaN HEMT structures can lead to more stable operation at high microwave powers with low power collapse. It was also observed that application of -1 volt bias resulted in an enhancement of the negative photoresponse below 300nm and reduction of the positive component of the photocurrent. It was suggested that growth conditions need to be adjusted to achieve comparable film quality of In-doped AlGaN/GaN HEMT structures.

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Y2 - 12 October 2003 through 17 October 2003

ER -

High performance wide-bandgap photonic and electronic devices grown by MBE

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