High performance ultrathin GaAs solar cells

Sung Min Lee, Anthony Kwong, Jung Daehwan, Joseph Faucher, Lang Shen, Roshni Biswas, Minjoo Larry Lee, Jongseung Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Epitaxially grown III-V compound semiconductors, such as gallium arsenide (GaAs), can provide superior photovoltaic (PV) performance due to many attractive material properties. However, the high cost of growing device-quality epitaxial materials has prevented their widespread adoption in terrestrial applications. In this regard, decreasing thicknesses of constituent epitaxial materials without compromising their photovoltaic performance is one of conceptually viable means to lower the cost. Here we present a type of thin film GaAs PV system with drastically reduced active layer thickness (∼200 nm), where dielectric periodic nanostructures and a metallic reflective element are heterogeneously integrated on the front- and back-surfaces of solar cells for nanophotonic light management to enhance the absorption and photovoltaic performance of ultrathin GaAs solar cells.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
StatePublished - Dec 14 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015


Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans


  • compound semiconductors
  • gallium arsenide solar cells
  • nanophotonic light management
  • titanium dioxide
  • transfer printing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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