High performance, sub-50nm MOSFETS for mixed signal applications

V. Dimitrov, J. B. Heng, K. Timp, O. Dimauro, R. Chan, J. Feng, W. Hafez, T. Sorsch, W. Mansfield, J. Miner, A. Kornblit, F. Klemens, J. Bower, R. Cirelli, E. Ferry, A. Taylor, M. Feng, G. Timp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated and tested sub-50nm gate length nMOSFETs with f T up to 290GHz to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. We have also developed an accurate, high frequency (1-50GHz) model suitable for integration with digital CMOS.

Original languageEnglish (US)
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages204-207
Number of pages4
StatePublished - 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: Dec 5 2005Dec 7 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
Country/TerritoryUnited States
CityWashington, DC, MD
Period12/5/0512/7/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'High performance, sub-50nm MOSFETS for mixed signal applications'. Together they form a unique fingerprint.

Cite this