High performance self-aligned SiGe p-type modulation-doped field-effect transistors

M. Arafa; K. Ismail; J. O. Chu; I. Adesida

High performance self-aligned SiGe p-type modulation-doped field-effect transistors

M. Arafa, K. Ismail, J. O. Chu, I. Adesida

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Abstract

This work reports on a self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a shallow, low thermal-budget ohmic contact and T-shaped gates. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition (UHV-CVD) on an n^- substrate. An extremely high maximum extrinsic transconductance (g_mext) varying from 150 mS/mm for the 1 μm gate-length devices to 250 mS/mm for the 0.25 μm devices was achieved. Also, a very high short-circuit current-gain cutoff frequency (f_T) ranging from 5 GHz for the 1 μm devices to 40 GHz for the 0.25 μm ones was obtained. Moreover, preliminary results for the 0.1 μm devices shows an f_T of 70 GHz.

Original language	English (US)
Pages	24-25
Number of pages	2
State	Published - 1996
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996

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Other	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
City	Santa Barbara, CA, USA
Period	6/24/96 → 6/26/96

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General Engineering

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title = "High performance self-aligned SiGe p-type modulation-doped field-effect transistors",

abstract = "This work reports on a self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a shallow, low thermal-budget ohmic contact and T-shaped gates. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition (UHV-CVD) on an n- substrate. An extremely high maximum extrinsic transconductance (gmext) varying from 150 mS/mm for the 1 μm gate-length devices to 250 mS/mm for the 0.25 μm devices was achieved. Also, a very high short-circuit current-gain cutoff frequency (fT) ranging from 5 GHz for the 1 μm devices to 40 GHz for the 0.25 μm ones was obtained. Moreover, preliminary results for the 0.1 μm devices shows an fT of 70 GHz.",

author = "M. Arafa and K. Ismail and Chu, {J. O.} and I. Adesida",

year = "1996",

language = "English (US)",

pages = "24--25",

note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

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T1 - High performance self-aligned SiGe p-type modulation-doped field-effect transistors

AU - Arafa, M.

AU - Ismail, K.

AU - Chu, J. O.

AU - Adesida, I.

PY - 1996

Y1 - 1996

N2 - This work reports on a self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a shallow, low thermal-budget ohmic contact and T-shaped gates. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition (UHV-CVD) on an n- substrate. An extremely high maximum extrinsic transconductance (gmext) varying from 150 mS/mm for the 1 μm gate-length devices to 250 mS/mm for the 0.25 μm devices was achieved. Also, a very high short-circuit current-gain cutoff frequency (fT) ranging from 5 GHz for the 1 μm devices to 40 GHz for the 0.25 μm ones was obtained. Moreover, preliminary results for the 0.1 μm devices shows an fT of 70 GHz.

AB - This work reports on a self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a shallow, low thermal-budget ohmic contact and T-shaped gates. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition (UHV-CVD) on an n- substrate. An extremely high maximum extrinsic transconductance (gmext) varying from 150 mS/mm for the 1 μm gate-length devices to 250 mS/mm for the 0.25 μm devices was achieved. Also, a very high short-circuit current-gain cutoff frequency (fT) ranging from 5 GHz for the 1 μm devices to 40 GHz for the 0.25 μm ones was obtained. Moreover, preliminary results for the 0.1 μm devices shows an fT of 70 GHz.

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T2 - Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC

Y2 - 24 June 1996 through 26 June 1996

ER -

High performance self-aligned SiGe p-type modulation-doped field-effect transistors

Abstract

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