High performance self-aligned SiGe p-type modulation-doped field-effect transistors

M. Arafa, K. Ismail, J. O. Chu, I. Adesida

Research output: Contribution to conferencePaperpeer-review

Abstract

This work reports on a self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a shallow, low thermal-budget ohmic contact and T-shaped gates. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition (UHV-CVD) on an n- substrate. An extremely high maximum extrinsic transconductance (gmext) varying from 150 mS/mm for the 1 μm gate-length devices to 250 mS/mm for the 0.25 μm devices was achieved. Also, a very high short-circuit current-gain cutoff frequency (fT) ranging from 5 GHz for the 1 μm devices to 40 GHz for the 0.25 μm ones was obtained. Moreover, preliminary results for the 0.1 μm devices shows an fT of 70 GHz.

Original languageEnglish (US)
Pages24-25
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

ASJC Scopus subject areas

  • Engineering(all)

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