High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

Ilesanmi Adesida; Vipan Kumar; Jinwei Yang; Muhammed Asif Khan

High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

Ilesanmi Adesida, Vipan Kumar, Jinwei Yang, Muhammed Asif Khan

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Abstract

Recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (f_T) of 80 GHz and maximum frequency of oscillation (f_max) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.

Original language	English (US)
Pages (from-to)	1955-1959
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E86-C
Issue number	10
State	Published - Oct 2003

Keywords

GaN
HEMTs
Sapphire

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire",

abstract = "Recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (fT) of 80 GHz and maximum frequency of oscillation (fmax) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.",

keywords = "GaN, HEMTs, Sapphire",

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journal = "IEICE Transactions on Electronics",

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publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

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T1 - High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

AU - Adesida, Ilesanmi

AU - Kumar, Vipan

AU - Yang, Jinwei

AU - Khan, Muhammed Asif

PY - 2003/10

Y1 - 2003/10

N2 - Recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (fT) of 80 GHz and maximum frequency of oscillation (fmax) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.

AB - Recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (fT) of 80 GHz and maximum frequency of oscillation (fmax) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.

KW - GaN

KW - HEMTs

KW - Sapphire

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M3 - Article

AN - SCOPUS:0242412458

SN - 0916-8524

VL - E86-C

SP - 1955

EP - 1959

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

Abstract

Keywords

ASJC Scopus subject areas

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