High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire

Ilesanmi Adesida, Vipan Kumar, Jinwei Yang, Muhammed Asif Khan

Research output: Contribution to journalArticlepeer-review


Recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated using inductively-coupled-plasma reactive ion etching (ICP-RIE) on sapphire substrate. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm and peak extrinsic transconductance of 346 mS/mm. The threshold voltage was -4.1 V. A unity gain cut-off frequency (fT) of 80 GHz and maximum frequency of oscillation (fmax) of 73 GHz were measured on these devices. Pulsed I-(V) measurements did not show any significant dispersion. At 20 GHz, a continuous-wave (CW) output power density of 3.1 W/mm with power-added-efficiency (PAE) of 29.9% was obtained.

Original languageEnglish (US)
Pages (from-to)1955-1959
Number of pages5
JournalIEICE Transactions on Electronics
Issue number10
StatePublished - Oct 2003


  • GaN
  • HEMTs
  • Sapphire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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