High-performance n- And p-type single-crystal organic transistors with free-space gate dielectrics

Etienne Menard, Vitaly Podzorov, Seung Hyun Hur, Anshu Gaur, Michael E. Gershenson, John A. Rogers

Research output: Contribution to journalArticle

Abstract

The study of high-performance n- and p- type single-crystal organic transistor using free-space gate dielectrics is analyzed. A transistor with a wide range range of channel dimensions and dielectric thickness was built using single crystals of two different molecules. It is observed that the transportation characteristics of the conducting channel depend critically on the properties of the rubrene crystals. It is also observed that the magnitude of the capacitance, which includes contributions from fringing fields that pass through the elastomer, can be accurately predicted by finite element modeling of the electrostatics.

Original languageEnglish (US)
Pages (from-to)2097-2101
Number of pages5
JournalAdvanced Materials
Volume16
Issue number23-24
DOIs
StatePublished - Dec 27 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Menard, E., Podzorov, V., Hur, S. H., Gaur, A., Gershenson, M. E., & Rogers, J. A. (2004). High-performance n- And p-type single-crystal organic transistors with free-space gate dielectrics. Advanced Materials, 16(23-24), 2097-2101. https://doi.org/10.1002/adma.200401017