GaAs MESFET’s with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AIGaAs/InGaAs pseudomorphic HEMT devices. Implanted MESFET’s with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency ft of 48 GHz and a maximum-available-gain cutoff frequency fmaxgreater than 100 GHz are achieved. These results dearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering