High-Performance Millimeter-Wave Ion-Implanted GaAs MESFET’s

G. W. Wang, Milton Feng, C. L. Lau, C. Ito, Thomas R. Lepkowski

Research output: Contribution to journalArticlepeer-review


GaAs MESFET’s with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AIGaAs/InGaAs pseudomorphic HEMT devices. Implanted MESFET’s with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency ft of 48 GHz and a maximum-available-gain cutoff frequency fmaxgreater than 100 GHz are achieved. These results dearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.

Original languageEnglish (US)
Pages (from-to)95-97
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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