High-Performance Millimeter-Wave Ion-Implanted GaAs MESFET’s

G. W. Wang; Milton Feng; C. L. Lau; C. Ito; Thomas R. Lepkowski

doi:10.1109/55.32440

High-Performance Millimeter-Wave Ion-Implanted GaAs MESFET’s

G. W. Wang, Milton Feng, C. L. Lau, C. Ito, Thomas R. Lepkowski

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs MESFET’s with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AIGaAs/InGaAs pseudomorphic HEMT devices. Implanted MESFET’s with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency ft of 48 GHz and a maximum-available-gain cutoff frequency fmaxgreater than 100 GHz are achieved. These results dearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.

Original language	English (US)
Pages (from-to)	95-97
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	10
Issue number	2
DOIs	https://doi.org/10.1109/55.32440
State	Published - Feb 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.32440

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title = "High-Performance Millimeter-Wave Ion-Implanted GaAs MESFET{\textquoteright}s",

abstract = "GaAs MESFET{\textquoteright}s with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AIGaAs/InGaAs pseudomorphic HEMT devices. Implanted MESFET{\textquoteright}s with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency ft of 48 GHz and a maximum-available-gain cutoff frequency fmaxgreater than 100 GHz are achieved. These results dearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.",

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T1 - High-Performance Millimeter-Wave Ion-Implanted GaAs MESFET’s

AU - Wang, G. W.

AU - Feng, Milton

AU - Lau, C. L.

AU - Ito, C.

AU - Lepkowski, Thomas R.

PY - 1989/2

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N2 - GaAs MESFET’s with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AIGaAs/InGaAs pseudomorphic HEMT devices. Implanted MESFET’s with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency ft of 48 GHz and a maximum-available-gain cutoff frequency fmaxgreater than 100 GHz are achieved. These results dearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.

AB - GaAs MESFET’s with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AIGaAs/InGaAs pseudomorphic HEMT devices. Implanted MESFET’s with 0.5-μm gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency ft of 48 GHz and a maximum-available-gain cutoff frequency fmaxgreater than 100 GHz are achieved. These results dearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.

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High-Performance Millimeter-Wave Ion-Implanted GaAs MESFET’s

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