High Performance Ion-Implanted Low Noise GaAs MESFET's

M. Feng, V. K. Eu, H. Kanber, R. Hackett

Research output: Contribution to journalArticle

Abstract

Low noise GaAs MESFET's fabricated by ion-implanting into ASCI3 VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a highly reproducible process. The average noise figure and associated gain of four device lots at 12 GHz are 1.6 dB and 10.0 dB, respectively. The standard deviation of noise figure and associated gain from device lot to lot are 0.03 dB and 0.19 dB, respectively. And the standard deviation of noise figure and associated gain from device to device for 35 devices over four lots are 0.13 dB and 0.47dB, respectively. The best device performance includes a 1.25 dB noise figure with 10.46 dB associated gain at 12 GHz for a 0.5 μm x 300 μm FET structure. These results demonstrate the excellent performance and process consistency of ion implanted MESFET's.

Original languageEnglish (US)
Pages (from-to)327-329
Number of pages3
JournalIEEE Electron Device Letters
Volume3
Issue number11
DOIs
StatePublished - Nov 1982

Fingerprint

Noise figure
Ions
Vapor phase epitaxy
Buffer layers
Field effect transistors
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High Performance Ion-Implanted Low Noise GaAs MESFET's. / Feng, M.; Eu, V. K.; Kanber, H.; Hackett, R.

In: IEEE Electron Device Letters, Vol. 3, No. 11, 11.1982, p. 327-329.

Research output: Contribution to journalArticle

Feng, M. ; Eu, V. K. ; Kanber, H. ; Hackett, R. / High Performance Ion-Implanted Low Noise GaAs MESFET's. In: IEEE Electron Device Letters. 1982 ; Vol. 3, No. 11. pp. 327-329.
@article{1f6dc6ff2f6f47a6a6cd2b96606b22af,
title = "High Performance Ion-Implanted Low Noise GaAs MESFET's",
abstract = "Low noise GaAs MESFET's fabricated by ion-implanting into ASCI3 VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a highly reproducible process. The average noise figure and associated gain of four device lots at 12 GHz are 1.6 dB and 10.0 dB, respectively. The standard deviation of noise figure and associated gain from device lot to lot are 0.03 dB and 0.19 dB, respectively. And the standard deviation of noise figure and associated gain from device to device for 35 devices over four lots are 0.13 dB and 0.47dB, respectively. The best device performance includes a 1.25 dB noise figure with 10.46 dB associated gain at 12 GHz for a 0.5 μm x 300 μm FET structure. These results demonstrate the excellent performance and process consistency of ion implanted MESFET's.",
author = "M. Feng and Eu, {V. K.} and H. Kanber and R. Hackett",
year = "1982",
month = "11",
doi = "10.1109/EDL.1982.25589",
language = "English (US)",
volume = "3",
pages = "327--329",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - High Performance Ion-Implanted Low Noise GaAs MESFET's

AU - Feng, M.

AU - Eu, V. K.

AU - Kanber, H.

AU - Hackett, R.

PY - 1982/11

Y1 - 1982/11

N2 - Low noise GaAs MESFET's fabricated by ion-implanting into ASCI3 VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a highly reproducible process. The average noise figure and associated gain of four device lots at 12 GHz are 1.6 dB and 10.0 dB, respectively. The standard deviation of noise figure and associated gain from device lot to lot are 0.03 dB and 0.19 dB, respectively. And the standard deviation of noise figure and associated gain from device to device for 35 devices over four lots are 0.13 dB and 0.47dB, respectively. The best device performance includes a 1.25 dB noise figure with 10.46 dB associated gain at 12 GHz for a 0.5 μm x 300 μm FET structure. These results demonstrate the excellent performance and process consistency of ion implanted MESFET's.

AB - Low noise GaAs MESFET's fabricated by ion-implanting into ASCI3 VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a highly reproducible process. The average noise figure and associated gain of four device lots at 12 GHz are 1.6 dB and 10.0 dB, respectively. The standard deviation of noise figure and associated gain from device lot to lot are 0.03 dB and 0.19 dB, respectively. And the standard deviation of noise figure and associated gain from device to device for 35 devices over four lots are 0.13 dB and 0.47dB, respectively. The best device performance includes a 1.25 dB noise figure with 10.46 dB associated gain at 12 GHz for a 0.5 μm x 300 μm FET structure. These results demonstrate the excellent performance and process consistency of ion implanted MESFET's.

UR - http://www.scopus.com/inward/record.url?scp=0020207774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020207774&partnerID=8YFLogxK

U2 - 10.1109/EDL.1982.25589

DO - 10.1109/EDL.1982.25589

M3 - Article

AN - SCOPUS:0020207774

VL - 3

SP - 327

EP - 329

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -