High Performance Ion-Implanted Low Noise GaAs MESFET's

M. Feng, V. K. Eu, H. Kanber, R. Hackett

Research output: Contribution to journalArticle

Abstract

Low noise GaAs MESFET's fabricated by ion-implanting into ASCI3 VPE buffer layers have demonstrated not only excellent dc and RF performance, but also a highly reproducible process. The average noise figure and associated gain of four device lots at 12 GHz are 1.6 dB and 10.0 dB, respectively. The standard deviation of noise figure and associated gain from device lot to lot are 0.03 dB and 0.19 dB, respectively. And the standard deviation of noise figure and associated gain from device to device for 35 devices over four lots are 0.13 dB and 0.47dB, respectively. The best device performance includes a 1.25 dB noise figure with 10.46 dB associated gain at 12 GHz for a 0.5 μm x 300 μm FET structure. These results demonstrate the excellent performance and process consistency of ion implanted MESFET's.

Original languageEnglish (US)
Pages (from-to)327-329
Number of pages3
JournalIEEE Electron Device Letters
Volume3
Issue number11
DOIs
StatePublished - Nov 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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