High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

S. W. Cho, J. H. Yun, D. H. Jun, J. I. Song, Ilesanmi Adesida, N. Pan, J. H. Jang

Research output: Contribution to journalArticle

Abstract

DC and RF characteristics of InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are reported. The device heterostructures include InAlAs spacer layer between InP emitter and GaAsSb base layer. The impact of thin InAlAs spacer layer was investigated by comparing the DC characteristics of large-area devices fabricated on InP/InAlAs/GaAsSb/InP and conventional InP/GaAsSb/InP heterostructures. By suppressing the base tunneling current and surface recombination current, the DHBTs with thin InAlAs spacer layer exhibited 5 decade lower crossover current of 7 × 10-11 A (collector current at unity current gain) than conventional InP/GaAsSb/InP DHBT that exhibited crossover current of 4 × 10-6 A. The current gain also improved twice by the impact of thin InAlAs layer. To investigate the high-frequency characteristics of InP/InAlAs/GaAsSb/InP DHBTs, small-area devices employing laterally etched undercut micro-airbridges were fabricated. The unity current gain cut-off frequency, fT, of 100 GHz was obtained from a 1 × 30 μm2 emitter DHBT.

Original languageEnglish (US)
Pages (from-to)902-907
Number of pages6
JournalSolid-State Electronics
Volume50
Issue number6
DOIs
StatePublished - Jun 1 2006

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Heterojunctions
spacers
Cutoff frequency
unity
crossovers
emitters
direct current
accumulators
cut-off

Keywords

  • Compound semiconductor
  • GaAsSb
  • Heterojunction bipolar transistors
  • InAlAs
  • Spacer layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Cho, S. W., Yun, J. H., Jun, D. H., Song, J. I., Adesida, I., Pan, N., & Jang, J. H. (2006). High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors. Solid-State Electronics, 50(6), 902-907. https://doi.org/10.1016/j.sse.2006.04.015

High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors. / Cho, S. W.; Yun, J. H.; Jun, D. H.; Song, J. I.; Adesida, Ilesanmi; Pan, N.; Jang, J. H.

In: Solid-State Electronics, Vol. 50, No. 6, 01.06.2006, p. 902-907.

Research output: Contribution to journalArticle

Cho, SW, Yun, JH, Jun, DH, Song, JI, Adesida, I, Pan, N & Jang, JH 2006, 'High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors', Solid-State Electronics, vol. 50, no. 6, pp. 902-907. https://doi.org/10.1016/j.sse.2006.04.015
Cho, S. W. ; Yun, J. H. ; Jun, D. H. ; Song, J. I. ; Adesida, Ilesanmi ; Pan, N. ; Jang, J. H. / High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors. In: Solid-State Electronics. 2006 ; Vol. 50, No. 6. pp. 902-907.
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AB - DC and RF characteristics of InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are reported. The device heterostructures include InAlAs spacer layer between InP emitter and GaAsSb base layer. The impact of thin InAlAs spacer layer was investigated by comparing the DC characteristics of large-area devices fabricated on InP/InAlAs/GaAsSb/InP and conventional InP/GaAsSb/InP heterostructures. By suppressing the base tunneling current and surface recombination current, the DHBTs with thin InAlAs spacer layer exhibited 5 decade lower crossover current of 7 × 10-11 A (collector current at unity current gain) than conventional InP/GaAsSb/InP DHBT that exhibited crossover current of 4 × 10-6 A. The current gain also improved twice by the impact of thin InAlAs layer. To investigate the high-frequency characteristics of InP/InAlAs/GaAsSb/InP DHBTs, small-area devices employing laterally etched undercut micro-airbridges were fabricated. The unity current gain cut-off frequency, fT, of 100 GHz was obtained from a 1 × 30 μm2 emitter DHBT.

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