High performance InAlAs/InGaAs/InP HEMT/MSM-based OEIC photoreceivers

I. Adesida, P. Fay, W. Wohlmuth, C. Caneau

Research output: Contribution to journalConference articlepeer-review


A high-speed, monolithically integrated photoreceiver suitable for 1.55 μm wavelength optical communication systems is described. The tunable photoreceiver, implemented using a metal-semiconductor-metal (MSM) photodetector and InAlAs/InGaAs/InP high electron mobility transistor (HEMT)-based transimpedance amplifier, exhibits -3 dB bandwidths of up to 17 GHz. Noise measurements revealed an input-referred noise current spectral density of 8 pA/Hz 1/2 when tuned for 10 Gb/s operation, and 12 pA/Hz 1/2 when tuned for 20 Gb/s operation. This results in a projected sensitivity of -16.5 dBm and -12.3 dBm at 10 and 20 Gb/s, respectively, for a bit error rate of 1 × 10-9.

Original languageEnglish (US)
Pages (from-to)579-582
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: Dec 10 1995Dec 13 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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