Abstract
A high-speed, monolithically integrated photoreceiver suitable for 1.55 μm wavelength optical communication systems is described. The tunable photoreceiver, implemented using a metal-semiconductor-metal (MSM) photodetector and InAlAs/InGaAs/InP high electron mobility transistor (HEMT)-based transimpedance amplifier, exhibits -3 dB bandwidths of up to 17 GHz. Noise measurements revealed an input-referred noise current spectral density of 8 pA/Hz 1/2 when tuned for 10 Gb/s operation, and 12 pA/Hz 1/2 when tuned for 20 Gb/s operation. This results in a projected sensitivity of -16.5 dBm and -12.3 dBm at 10 and 20 Gb/s, respectively, for a bit error rate of 1 × 10-9.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 579-582 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1995 |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry