@article{181bd85344634d60b3f59ab0c2689b2a,
title = "High performance GaAsSbInP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy",
abstract = "High quality GaAsSbInP double heterojunction bipolar transistor (DHBT) structures were grown using gas-source molecular beam epitaxy. The substrate temperature and V/III flux ratio were optimized to grow single phase GaAsSb base layers lattice matched to InP. The dc gain as high as 40 was obtained in 60×60 μ m2 GaAsSbInP DHBTs with a 500 {\AA} carbon doped (7× 1019 cm-3) GaAsSb base layer. High performance DHBT with a 250 {\AA} base layer shows a current gain cutoff frequency fT of 346 GHz and maximum oscillation frequency fmax of 145 GHz.",
author = "Wu, {Bing Ruey} and Chu-Kung, {Benjamin F.} and Milton Feng and Cheng, {K. Y.}",
note = "Funding Information: The authors thank the TEM work performed by Mr. Chaofeng Xu and Professor Kuang-Chien Hsieh of the University of Illinois at Urbana-Champaign. This study is supported by DARPA through the University Photonics Research Center for Hyper-Uniform Nano-photonics Technology (HUNT Center) program. Two of the authors (B.-R.W. and B.C.-K.) would like to thank Semiconductor Research Corporation and the Pao Foundation Fellowships, respectively, for support. The TEM and AFM measurement was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. ",
year = "2006",
month = may,
doi = "10.1116/1.2190678",
language = "English (US)",
volume = "24",
pages = "1564--1567",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",
}