High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

A. Mahajan; P. Fay; C. Caneau; I. Adesida

doi:10.1049/el:19960652

High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

A. Mahajan, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication of 1.0μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an f_t of 35GHz and an f_max of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

Original language	English (US)
Pages (from-to)	1037-1038
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1049/el:19960652
State	Published - May 23 1996
Externally published	Yes

Keywords

Carrier mobility
High electron mobility transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19960652

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title = "High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP",

abstract = "The fabrication of 1.0μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an ft of 35GHz and an fmax of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.",

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AU - Mahajan, A.

AU - Fay, P.

AU - Caneau, C.

AU - Adesida, I.

PY - 1996/5/23

Y1 - 1996/5/23

N2 - The fabrication of 1.0μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an ft of 35GHz and an fmax of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

AB - The fabrication of 1.0μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an ft of 35GHz and an fmax of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

KW - Carrier mobility

KW - High electron mobility transistors

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High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

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Keywords

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