The fabrication of 1.0μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an ft of 35GHz and an fmax of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.
|Original language||English (US)|
|Number of pages||2|
|State||Published - May 23 1996|
- Carrier mobility
- High electron mobility transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering