High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment

Liang Pang, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present high performance E-mode AlGaN/GaN MOSHEMT achieved by Fluoride-based plasma treatment and bimodal-gate-oxide scheme. ALD-Al 2O3is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2 is employed to suppress the plasma induced gate leakage current and increase the gate swing. Comparing with the D-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

Original languageEnglish (US)
Title of host publication2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages341-344
Number of pages4
StatePublished - 2013
Event28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States
Duration: May 13 2013May 16 2013

Other

Other28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
CountryUnited States
CityNew Orleans, LA
Period5/13/135/16/13

Fingerprint

Plasmas
Oxides
Two dimensional electron gas
Ion implantation
Leakage currents
Degradation

Keywords

  • Bimodal-gate-oxide
  • CF plasma treatment
  • Enhancement-mode
  • GaN HEMT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Pang, L., & Kim, K. (2013). High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment. In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 (pp. 341-344)

High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment. / Pang, Liang; Kim, Kyekyoon.

2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 2013. p. 341-344.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pang, L & Kim, K 2013, High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment. in 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. pp. 341-344, 28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013, New Orleans, LA, United States, 5/13/13.
Pang L, Kim K. High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment. In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 2013. p. 341-344
Pang, Liang ; Kim, Kyekyoon. / High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment. 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 2013. pp. 341-344
@inproceedings{c861061891574664930ac8cfb9afe4cb,
title = "High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment",
abstract = "We present high performance E-mode AlGaN/GaN MOSHEMT achieved by Fluoride-based plasma treatment and bimodal-gate-oxide scheme. ALD-Al 2O3is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2 is employed to suppress the plasma induced gate leakage current and increase the gate swing. Comparing with the D-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8{\%} degradation in Imax, demonstrating the promise of bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.",
keywords = "Bimodal-gate-oxide, CF plasma treatment, Enhancement-mode, GaN HEMT",
author = "Liang Pang and Kyekyoon Kim",
year = "2013",
language = "English (US)",
isbn = "1893580210",
pages = "341--344",
booktitle = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",

}

TY - GEN

T1 - High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment

AU - Pang, Liang

AU - Kim, Kyekyoon

PY - 2013

Y1 - 2013

N2 - We present high performance E-mode AlGaN/GaN MOSHEMT achieved by Fluoride-based plasma treatment and bimodal-gate-oxide scheme. ALD-Al 2O3is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2 is employed to suppress the plasma induced gate leakage current and increase the gate swing. Comparing with the D-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

AB - We present high performance E-mode AlGaN/GaN MOSHEMT achieved by Fluoride-based plasma treatment and bimodal-gate-oxide scheme. ALD-Al 2O3is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2 is employed to suppress the plasma induced gate leakage current and increase the gate swing. Comparing with the D-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

KW - Bimodal-gate-oxide

KW - CF plasma treatment

KW - Enhancement-mode

KW - GaN HEMT

UR - http://www.scopus.com/inward/record.url?scp=84887335629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887335629&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1893580210

SN - 9781893580213

SP - 341

EP - 344

BT - 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013

ER -