@inproceedings{c861061891574664930ac8cfb9afe4cb,
title = "High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment",
abstract = "We present high performance E-mode AlGaN/GaN MOSHEMT achieved by Fluoride-based plasma treatment and bimodal-gate-oxide scheme. ALD-Al 2O3is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2 is employed to suppress the plasma induced gate leakage current and increase the gate swing. Comparing with the D-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.",
keywords = "Bimodal-gate-oxide, CF plasma treatment, Enhancement-mode, GaN HEMT",
author = "Liang Pang and Kyekyoon Kim",
year = "2013",
language = "English (US)",
isbn = "1893580210",
series = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",
pages = "341--344",
booktitle = "2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013",
note = "28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 ; Conference date: 13-05-2013 Through 16-05-2013",
}