High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment

Liang Pang, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present high performance E-mode AlGaN/GaN MOSHEMT achieved by Fluoride-based plasma treatment and bimodal-gate-oxide scheme. ALD-Al 2O3is utilized to prevent deep F- ion implantation into the 2DEG channel, while sputtered-SiO2 is employed to suppress the plasma induced gate leakage current and increase the gate swing. Comparing with the D-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

Original languageEnglish (US)
Title of host publication2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
Pages341-344
Number of pages4
StatePublished - Nov 15 2013
Event28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 - New Orleans, LA, United States
Duration: May 13 2013May 16 2013

Publication series

Name2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013

Other

Other28th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013
CountryUnited States
CityNew Orleans, LA
Period5/13/135/16/13

Keywords

  • Bimodal-gate-oxide
  • CF plasma treatment
  • Enhancement-mode
  • GaN HEMT

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Pang, L., & Kim, K. (2013). High performance enhancement-mode AlGaN/GaN MOSHEMT using bimodal-gate-oxide and fluoride-based plasma treatment. In 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 (pp. 341-344). (2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013).