High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures

A. Haggag, W. McMahon, K. Hess, K. Cheng, J. Lee, J. Lyding

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In high-performance chips, both Bragg gratings (used for signal separation in multi-signal optical interconnect alternatives to copper interconnect architectures) and deep-submicron transistors fail when the stress-induced activation of the performance enhancing hydrogen in the amorphous oxide generates enough defects to significantly degrade performance. By making an analogy to the more mature theory of Bragg gratings, disorder-induced variations in the activation (generation) energies of the defects, are shown to be a sufficient explanation for the sub-linear time dependence of HCI (hot carrier induced degradation), TDDB (time dependent dielectric [soft/hard] breakdown) and NBTI (negative bias temperature instability) deep-submicron transistor degradation modes. We then show that for all these degradation modes, Weibull (not lognormal as is sometimes assumed) intrinsic failure-time distributions result from the variations in defect activation energies and that the short-time device degradation can be used to extract tails of these semi-symmetric Weibull failure-time distributions. This also explains why Arrhenius defect generation rates yield nonArrhenius MTF in small devices. Combining the resulting failure statistics with a novel qualification methodology, "latent failures" can be avoided through design changes implemented for reliability.

Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages271-279
Number of pages9
Volume2001-January
ISBN (Electronic)0780365879
DOIs
StatePublished - Jan 1 2001

Fingerprint

Hot carriers
Optical interconnects
Transistors
Degradation
Defects
Bragg gratings
Chemical activation
Activation energy
Statistics
Copper
Hydrogen
Oxides
Negative bias temperature instability
Statistical Models

Keywords

  • Amorphous materials
  • Bragg gratings
  • Copper
  • Degradation
  • Hot carriers
  • Human computer interaction
  • Hydrogen
  • Optical interconnections
  • Signal generators
  • Source separation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Haggag, A., McMahon, W., Hess, K., Cheng, K., Lee, J., & Lyding, J. (2001). High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2001-January, pp. 271-279). [922913] https://doi.org/10.1109/RELPHY.2001.922913

High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures. / Haggag, A.; McMahon, W.; Hess, K.; Cheng, K.; Lee, J.; Lyding, J.

IEEE International Reliability Physics Symposium Proceedings. Vol. 2001-January 2001. p. 271-279 922913.

Research output: Chapter in Book/Report/Conference proceedingChapter

Haggag, A, McMahon, W, Hess, K, Cheng, K, Lee, J & Lyding, J 2001, High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures. in IEEE International Reliability Physics Symposium Proceedings. vol. 2001-January, 922913, pp. 271-279. https://doi.org/10.1109/RELPHY.2001.922913
Haggag A, McMahon W, Hess K, Cheng K, Lee J, Lyding J. High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures. In IEEE International Reliability Physics Symposium Proceedings. Vol. 2001-January. 2001. p. 271-279. 922913 https://doi.org/10.1109/RELPHY.2001.922913
Haggag, A. ; McMahon, W. ; Hess, K. ; Cheng, K. ; Lee, J. ; Lyding, J. / High-performance chip reliability from short-time-tests-statistical models for optical interconnect and HCI/TDDB/NBTI deep-submicron transistor failures. IEEE International Reliability Physics Symposium Proceedings. Vol. 2001-January 2001. pp. 271-279
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