High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures

A. Haggag, W. McMahon, K. Hess, K. Cheng, J. Lee, J. Lyding

Research output: Contribution to journalConference article

Abstract

In high-performance chips, both Bragg gratings (used for signal separation in multi-signal optical interconnect alternatives to copper interconnect architectures) and deep-submicron transistors fail when the stress-induced activation of the performance-enhancing hydrogen in the amorphous oxide generates enough defects to significantly degrade performance. By making an analogy to the more mature theory of Bragg gratings, disorder-induced variations in the activation (generation) energies of the defects, are shown to be a sufficient explanation for the sub-linear time dependence of HCI (hot carrier induced degradation), TDDB (time dependent dielectric [soft/hard] breakdown) and NBTI (negative bias temperature instability) deep-submicron transistor degradation modes. We then show that for all these degradation modes, Weibull (not Lognormal as is sometimes assumed) intrinsic failure-time distributions result from the variations in defect activation energies and that the short-time device degradation can be used to extract tails of these semi-symmetric Weibull failure-time distributions. This also explains why Arrhenius defect generation rates yield non-Arrhenius MTF in small devices. Combining the resulting failure statistics with novel qualification methodology, "latent failures" can be avoided through design changes implemented for reliability.

Original languageEnglish (US)
Pages (from-to)271-279
Number of pages9
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - Jan 1 2001
Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
Duration: Apr 30 2001May 3 2001

Fingerprint

Optical interconnects
Transistors
Degradation
Defects
Bragg gratings
Chemical activation
Hot carriers
Activation energy
Statistics
Copper
Hydrogen
Oxides
Negative bias temperature instability
Statistical Models

Keywords

  • Activation energy distribution
  • Bimodal Weibull distribution
  • Bragg gratings
  • CMOS scaling
  • Deep submicron transistors
  • Double power law
  • Failure statistics
  • Hot carrier degradation
  • Negative bias temperature instability
  • Non Arrhenius
  • Probabilistic physics of failure
  • Short time tests
  • Single
  • Thermal stability
  • Time dependence of degradation
  • Time dependent dielectric breakdown
  • Unimodal
  • WDM optical interconnect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures. / Haggag, A.; McMahon, W.; Hess, K.; Cheng, K.; Lee, J.; Lyding, J.

In: Annual Proceedings - Reliability Physics (Symposium), 01.01.2001, p. 271-279.

Research output: Contribution to journalConference article

@article{5fe8203f78de4e48bc3e6e1c4807bfda,
title = "High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures",
abstract = "In high-performance chips, both Bragg gratings (used for signal separation in multi-signal optical interconnect alternatives to copper interconnect architectures) and deep-submicron transistors fail when the stress-induced activation of the performance-enhancing hydrogen in the amorphous oxide generates enough defects to significantly degrade performance. By making an analogy to the more mature theory of Bragg gratings, disorder-induced variations in the activation (generation) energies of the defects, are shown to be a sufficient explanation for the sub-linear time dependence of HCI (hot carrier induced degradation), TDDB (time dependent dielectric [soft/hard] breakdown) and NBTI (negative bias temperature instability) deep-submicron transistor degradation modes. We then show that for all these degradation modes, Weibull (not Lognormal as is sometimes assumed) intrinsic failure-time distributions result from the variations in defect activation energies and that the short-time device degradation can be used to extract tails of these semi-symmetric Weibull failure-time distributions. This also explains why Arrhenius defect generation rates yield non-Arrhenius MTF in small devices. Combining the resulting failure statistics with novel qualification methodology, {"}latent failures{"} can be avoided through design changes implemented for reliability.",
keywords = "Activation energy distribution, Bimodal Weibull distribution, Bragg gratings, CMOS scaling, Deep submicron transistors, Double power law, Failure statistics, Hot carrier degradation, Negative bias temperature instability, Non Arrhenius, Probabilistic physics of failure, Short time tests, Single, Thermal stability, Time dependence of degradation, Time dependent dielectric breakdown, Unimodal, WDM optical interconnect",
author = "A. Haggag and W. McMahon and K. Hess and K. Cheng and J. Lee and J. Lyding",
year = "2001",
month = "1",
day = "1",
language = "English (US)",
pages = "271--279",
journal = "Annual Proceedings - Reliability Physics (Symposium)",
issn = "0099-9512",

}

TY - JOUR

T1 - High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures

AU - Haggag, A.

AU - McMahon, W.

AU - Hess, K.

AU - Cheng, K.

AU - Lee, J.

AU - Lyding, J.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - In high-performance chips, both Bragg gratings (used for signal separation in multi-signal optical interconnect alternatives to copper interconnect architectures) and deep-submicron transistors fail when the stress-induced activation of the performance-enhancing hydrogen in the amorphous oxide generates enough defects to significantly degrade performance. By making an analogy to the more mature theory of Bragg gratings, disorder-induced variations in the activation (generation) energies of the defects, are shown to be a sufficient explanation for the sub-linear time dependence of HCI (hot carrier induced degradation), TDDB (time dependent dielectric [soft/hard] breakdown) and NBTI (negative bias temperature instability) deep-submicron transistor degradation modes. We then show that for all these degradation modes, Weibull (not Lognormal as is sometimes assumed) intrinsic failure-time distributions result from the variations in defect activation energies and that the short-time device degradation can be used to extract tails of these semi-symmetric Weibull failure-time distributions. This also explains why Arrhenius defect generation rates yield non-Arrhenius MTF in small devices. Combining the resulting failure statistics with novel qualification methodology, "latent failures" can be avoided through design changes implemented for reliability.

AB - In high-performance chips, both Bragg gratings (used for signal separation in multi-signal optical interconnect alternatives to copper interconnect architectures) and deep-submicron transistors fail when the stress-induced activation of the performance-enhancing hydrogen in the amorphous oxide generates enough defects to significantly degrade performance. By making an analogy to the more mature theory of Bragg gratings, disorder-induced variations in the activation (generation) energies of the defects, are shown to be a sufficient explanation for the sub-linear time dependence of HCI (hot carrier induced degradation), TDDB (time dependent dielectric [soft/hard] breakdown) and NBTI (negative bias temperature instability) deep-submicron transistor degradation modes. We then show that for all these degradation modes, Weibull (not Lognormal as is sometimes assumed) intrinsic failure-time distributions result from the variations in defect activation energies and that the short-time device degradation can be used to extract tails of these semi-symmetric Weibull failure-time distributions. This also explains why Arrhenius defect generation rates yield non-Arrhenius MTF in small devices. Combining the resulting failure statistics with novel qualification methodology, "latent failures" can be avoided through design changes implemented for reliability.

KW - Activation energy distribution

KW - Bimodal Weibull distribution

KW - Bragg gratings

KW - CMOS scaling

KW - Deep submicron transistors

KW - Double power law

KW - Failure statistics

KW - Hot carrier degradation

KW - Negative bias temperature instability

KW - Non Arrhenius

KW - Probabilistic physics of failure

KW - Short time tests

KW - Single

KW - Thermal stability

KW - Time dependence of degradation

KW - Time dependent dielectric breakdown

KW - Unimodal

KW - WDM optical interconnect

UR - http://www.scopus.com/inward/record.url?scp=0035014926&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035014926&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035014926

SP - 271

EP - 279

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

ER -