High-performance chip reliability from short-time-tests Statistical models for optical interconnect and HCl/TDDB/NBTI deep-submicron transistor failures

A. Haggag, W. McMahon, K. Hess, K. Cheng, J. Lee, J. Lyding

Research output: Contribution to journalConference articlepeer-review

Abstract

In high-performance chips, both Bragg gratings (used for signal separation in multi-signal optical interconnect alternatives to copper interconnect architectures) and deep-submicron transistors fail when the stress-induced activation of the performance-enhancing hydrogen in the amorphous oxide generates enough defects to significantly degrade performance. By making an analogy to the more mature theory of Bragg gratings, disorder-induced variations in the activation (generation) energies of the defects, are shown to be a sufficient explanation for the sub-linear time dependence of HCI (hot carrier induced degradation), TDDB (time dependent dielectric [soft/hard] breakdown) and NBTI (negative bias temperature instability) deep-submicron transistor degradation modes. We then show that for all these degradation modes, Weibull (not Lognormal as is sometimes assumed) intrinsic failure-time distributions result from the variations in defect activation energies and that the short-time device degradation can be used to extract tails of these semi-symmetric Weibull failure-time distributions. This also explains why Arrhenius defect generation rates yield non-Arrhenius MTF in small devices. Combining the resulting failure statistics with novel qualification methodology, "latent failures" can be avoided through design changes implemented for reliability.

Original languageEnglish (US)
Pages (from-to)271-279
Number of pages9
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 2001
Event39th Annual International Reliability Physics Symposium - Orlando, FL, United States
Duration: Apr 30 2001May 3 2001

Keywords

  • Activation energy distribution
  • Bimodal Weibull distribution
  • Bragg gratings
  • CMOS scaling
  • Deep submicron transistors
  • Double power law
  • Failure statistics
  • Hot carrier degradation
  • Negative bias temperature instability
  • Non Arrhenius
  • Probabilistic physics of failure
  • Short time tests
  • Single
  • Thermal stability
  • Time dependence of degradation
  • Time dependent dielectric breakdown
  • Unimodal
  • WDM optical interconnect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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