High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts

Jianshi Tang, Qing Cao, Damon B. Farmer, George Tulevski, Shu Jen Han

Research output: Contribution to journalArticle

Abstract

Carbon nanotube (CNT) has been envisioned as a promising channel replacement for silicon in sub-5 nm logic technology nodes. Successful implementation of CNT-based CMOS technology requires high-quality low-resistance contacts for both ${p}$ - and ${n}$ -type field-effect transistors (PFETs and NFETs) that can be scaled down to sub-10 nm size. End-bonded contact schemes potentially provide the solution for ultrascaled contacts to CNTs with their low and size-independent contact resistances. In this paper, we report a new form of end-bonded metal contacts made by carbon dissolution into metal contacts with high carbon solubility (e.g., Ni and Co). This new approach requires low annealing temperature (400 °C-600 °C) and maintains metal integrity post contact formation, which has been the major issue in previous metal carbide-based demonstrations where typically >900 °C annealing is required. The end-bonded Ni contacts serve as robust ${p}$ -type contacts to CNTs, and perform better than standard side-bonded Pd contacts at scaled dimensions. In addition, for the first time, we demonstrate CMOS logic with end-bonded Ni contacts, featuring the smallest reported contact size thus far for CNT inverters. These findings could pave the way to realizing CNT-based scalable CMOS technology.

Original languageEnglish (US)
Article number7906511
Pages (from-to)2744-2750
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number6
DOIs
StatePublished - Jun 2017

Fingerprint

Carbon Nanotubes
Carbon nanotubes
Metals
Contact resistance
Contacts (fluid mechanics)
Carbon
Annealing
Silicon
Field effect transistors
Carbides
Dissolution
Demonstrations
Solubility
Temperature

Keywords

  • CMOS logic
  • Carbon nanotube (CNT)
  • end-bonded contact
  • n-type field-effect transistors (NFET)
  • nickel

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts. / Tang, Jianshi; Cao, Qing; Farmer, Damon B.; Tulevski, George; Han, Shu Jen.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 6, 7906511, 06.2017, p. 2744-2750.

Research output: Contribution to journalArticle

Tang, Jianshi ; Cao, Qing ; Farmer, Damon B. ; Tulevski, George ; Han, Shu Jen. / High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 6. pp. 2744-2750.
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