High performance and highly stable ultra-thin oxynitride for CMOS applications

Wenjuan Zhu, Joseph Shepard, Wei He, Asit Ray, Paul Ronsheim, Dominic Schepis, Dan Mocuta, Effendi Leobandung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The device characteristics and manufacturability of ultra-thin oxynitride have been systemically studied in this paper for CMOS applications. We have found that the transistor with plasma oxynitride gate dielectrics gives better pFET performance in terms of drive current, mobility, threshold voltage and leakage current as compared to the one with thermal oxynitride. For nFET, the performance for transistors with plasma oxynitride and thermal oxynitride are almost equivalent. The manufacturability of plasma oxynitride is also thoroughly investigated. This paper proposes pre-conditioning process in plasma nitridation process which can significantly reduce the wafer-to-wafer variation for nitrogen and oxygen dose in the ultra-thin gate dielectrics.

Original languageEnglish (US)
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages223-226
Number of pages4
DOIs
StatePublished - Dec 1 2008
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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