Abstract
Substantially reduced threshold current density and improved efficiency in long-wavelength (> 1.4 μm) GaAs-based lasers are reported. A 20×1220 μm as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm2, external efficiency of 53%, and 200 mW peak output power at 1.5 μm. The pulsed threshold current density was 450 A/cm2 with 1145 mW peak output power.
Original language | English (US) |
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Pages (from-to) | 1186-1187 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 40 |
Issue number | 19 |
DOIs | |
State | Published - Sep 16 2004 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering