High-performance 1.5 μm GalnNAsSb lasers grown on GaAs

S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, J. S. Harris

Research output: Contribution to journalArticle

Abstract

Substantially reduced threshold current density and improved efficiency in long-wavelength (> 1.4 μm) GaAs-based lasers are reported. A 20×1220 μm as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm2, external efficiency of 53%, and 200 mW peak output power at 1.5 μm. The pulsed threshold current density was 450 A/cm2 with 1145 mW peak output power.

Original languageEnglish (US)
Pages (from-to)1186-1187
Number of pages2
JournalElectronics Letters
Volume40
Issue number19
DOIs
StatePublished - Sep 16 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Bae, H. P., & Harris, J. S. (2004). High-performance 1.5 μm GalnNAsSb lasers grown on GaAs. Electronics Letters, 40(19), 1186-1187. https://doi.org/10.1049/el:20046270